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15C01S-TL-E

Part No 15C01S-TL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer ON Semiconductor
Win Source Part Number 149111-15C01S-TL-E
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 15C01S-TL-E CAD Model

Description

ON Semiconductor 15C01S-TL-E Product Overview

The 15C01S-TL-E is a cutting-edge, high-performance Schottky Barrier Diode designed by ON Semiconductor, a leader in the semiconductor industry. This diode is specifically tailored for applications requiring a combination of low forward voltage drop and high current capability. With its compact and robust design, the 15C01S-TL-E is an ideal choice for a variety of power management applications.

Key Features

  • Low Forward Voltage Drop: The diode provides a low Vf, which enhances the efficiency of the application by reducing power loss during conduction.
  • High Current Capability: It is capable of handling high current, making it suitable for high-power applications.
  • Small Package Size: The 15C01S-TL-E comes in a compact package, allowing for efficient use of PCB space in densely packed electronic circuits.
  • High Reliability: ON Semiconductor's commitment to quality ensures that this diode offers excellent reliability for a long operational life.
  • Lead-Free and RoHS Compliant: The product is environmentally friendly, complying with the current RoHS directive, which restricts the use of certain hazardous substances in electronic equipment.

Applications

The versatility of the 15C01S-TL-E Schottky Barrier Diode makes it suitable for a wide range of applications, including but not limited to:

  • Switching power supplies
  • DC-DC converters
  • Free-wheeling diodes in power circuits
  • Reverse battery protection
  • OR-ing diodes in redundant power systems
  • Automotive applications

Technical Specifications

The 15C01S-TL-E offers a comprehensive set of technical specifications that make it a robust choice for designers:

  • Maximum repetitive reverse voltage (Vrrm): 40V
  • Maximum average forward rectified current (Io): 1.5A
  • Forward voltage (Vf) at If: 0.55V @ 1.5A
  • Operating junction temperature range: -40°C to +125°C

ON Semiconductor's 15C01S-TL-E Schottky Barrier Diode is a testament to the company's dedication to providing high-quality, efficient, and reliable components for the electronics industry. Its superior characteristics ensure optimal performance in a multitude of applications, making it a preferred choice for engineers and designers alike.

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