ON Semiconductor 2N4403RLRAG - PNP Bipolar Transistor

The 2N4403RLRAG is a PNP bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-quality semiconductor device is engineered for use in general-purpose amplification and switching applications. Its robust design ensures reliable performance in a wide range of electronic circuits.

Key Features

• Transistor Polarity: PNP - suitable for complementary designs with NPN transistors.
• Collector-Emitter Voltage (VCEO): 40V - provides a good margin for medium voltage applications.
• Collector-Base Voltage (VCBO): 40V - ensures stable operation under high voltage conditions.
• Emitter-Base Voltage (VEBO): 5V - allows for a reasonable reverse bias voltage.
• Collector Current (IC): 600 mA - capable of driving moderate loads.
• Power Dissipation (Pd): 625 mW - sufficient for handling low to moderate power applications.
• DC Current Gain (hFE): 40 to 300 - provides a wide range of amplification factors for flexible circuit design.
• Operating and Storage Junction Temperature Range: -55°C to +150°C - ensures durability and reliability across diverse environmental conditions.
• Package / Case: TO-92-3 - a widely used, through-hole package that is easy to handle and integrate into PCB designs.

Applications

The ON Semiconductor 2N4403RLRAG transistor is versatile and can be used in various electronic applications including, but not limited to:

• Amplifier stages
• Switching circuits
• Signal processing
• Linear and digital integrated circuits
• Power management solutions

Quality and Reliability

ON Semiconductor is committed to delivering products that meet the highest standards of quality and reliability. The 2N4403RLRAG is no exception, undergoing rigorous testing to ensure it meets the stringent requirements for commercial and industrial electronic devices. Its performance is backed by ON Semiconductor's reputation for producing reliable, state-of-the-art electronic components.