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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 7A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 400mV @ 40mA, 2A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 500mA, 2V
Maximum Power Dissipation 3.5W
Frequency - Transition 330MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PCP
Win Source Part Number 1004204-2SA2016-TD-E
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name 2SA2016
Introduction Date June 20, 2005
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian 2SA2016-TD-E CAD Model

Description

ON Semiconductor 2SA2016-TD-E PNP Transistor

The 2SA2016-TD-E from ON Semiconductor is a high-performance PNP bipolar transistor that offers a perfect balance of power efficiency and robustness for a variety of electronic applications. This semiconductor device is designed to meet the stringent requirements of modern electronic circuits, providing reliable operation and consistent performance.

With its compact SOT-89 package, the 2SA2016-TD-E is optimized for space-constrained applications while still delivering the thermal and electrical performance expected from a larger device. This makes it an ideal choice for portable and miniaturized electronics where space is at a premium.

The transistor features a collector-emitter voltage (Vceo) of -50V, which allows it to handle moderate voltage applications with ease. It also boasts a collector current (Ic) of -2A, making it suitable for driving moderate loads. Additionally, the 2SA2016-TD-E offers a gain bandwidth product (fT) of 120MHz, which is indicative of its ability to handle high-speed signal processing applications with minimal signal degradation.

One of the key advantages of the 2SA2016-TD-E is its low saturation voltage, which reduces power loss and improves efficiency, particularly in low-voltage switching applications. This feature, coupled with the fast switching speeds, makes it an excellent choice for power management circuits, including DC-DC converters, battery chargers, and power amplifiers.

The ON Semiconductor 2SA2016-TD-E also features a high collector current capability and a wide operating temperature range, ensuring reliability and performance even under harsh conditions. Its robust construction is designed to withstand the rigors of daily use, making it a durable choice for industrial, automotive, and consumer electronics applications.

Overall, the 2SA2016-TD-E PNP transistor is a versatile component that provides designers with a high degree of flexibility, enabling the creation of more efficient and reliable electronic designs. Its combination of power handling, speed, and compact form factor makes it an excellent choice for a wide range of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0432 $57.3760
135+ $0.8559 $115.5465
205+ $0.8291 $169.9655
280+ $0.8025 $224.7000
365+ $0.7757 $283.1305
485+ $0.6954 $337.2690
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 30,000 pieces
MOQ: 55 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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