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2SB1204T-TL-E

Part No 2SB1204T-TL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 50V 8A TP-FA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 8A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 500mV @ 200mA, 4A
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 200 @ 500mA, 2V
Maximum Power Dissipation 1W
Frequency - Transition 130MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 2-TP-FA
Win Source Part Number 075425-2SB1204T-TL-E
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SB1204T-TL-E CAD Model

Description

ON Semiconductor 2SB1204T-TL-E PNP Transistor

The ON Semiconductor 2SB1204T-TL-E is a high-performance PNP transistor designed for use in a wide range of electronic applications. This versatile component is well-suited for power management functions, including voltage regulation, switching, and amplification. It is commonly employed in consumer electronics, automotive systems, and industrial equipment due to its reliability and efficiency.

Key Features:

  • Transistor Type: The 2SB1204T-TL-E is a PNP (Positive-Negative-Positive) bipolar junction transistor (BJT), which means it is designed to pass current in a direction opposite to NPN transistors.
  • High Current Capability: This transistor can handle a continuous collector current (Ic) of up to 1A, making it suitable for moderate power applications.
  • Low Collector-Emitter Saturation Voltage: It offers a low Vce(sat) typically at 0.2V, which allows for efficient operation and minimal power loss during switching.
  • Power Dissipation: With a power dissipation of 1W, the 2SB1204T-TL-E can manage a moderate amount of heat generated during operation without the need for additional heat sinking in most applications.
  • High Transition Frequency: The device features a high fT of 120MHz, which is beneficial for applications that require fast switching and signal processing.

Applications:

  • Power supply circuits
  • Audio amplifiers
  • Signal processing
  • Motor control
  • DC-DC converters
  • Automotive modules

The 2SB1204T-TL-E is housed in a compact SOT-428 (SC-62) package, which is ideal for space-constrained applications. Its lead-free and RoHS compliant design ensures that it meets current environmental standards, making it a responsible choice for modern electronic designs. The device also features excellent hFE linearity, which contributes to stable performance across a range of operating conditions.

Overall, the ON Semiconductor 2SB1204T-TL-E PNP transistor is a reliable and efficient choice for designers looking to optimize their circuitry with a component that offers both versatility and performance.

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