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2SB1216S-E

Part No 2SB1216S-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 4A TP
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Package Bulk
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 500mA, 5V
Power - Max 1 W
Frequency - Transition 130MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP
Base Product Number 2SB1216
Standard Package 500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 855110-2SB1216S-E
Ultra Librarian 3D Model Ultra Librarian 2SB1216S-E CAD Model

Description

The 2SB1216S-E from ON Semiconductor is a high-performance PNP bipolar transistor designed to offer a blend of efficiency and reliability for a variety of electronic applications. This semiconductor device is well-suited for power amplification and switching applications, thanks to its robust features that cater to the needs of modern electronic circuits.

Key Features

  • High Current Capacity: The 2SB1216S-E is capable of handling high current loads, making it suitable for power-intensive applications.
  • Low Saturation Voltage: It has a low V<sub>CE(sat), which means it can operate efficiently at lower voltages, reducing power loss and improving overall system efficiency.
  • Fast Switching Speed: The device is designed for rapid switching, which is essential for applications requiring quick response times.
  • Complementary NPN Type Available: ON Semiconductor provides a complementary NPN transistor, allowing for the creation of push-pull amplifier configurations.

Applications

The versatility of the 2SB1216S-E makes it ideal for a wide range of applications, including:

  • Power management circuits
  • Audio amplifiers
  • Signal processing
  • Motor control circuits
  • Linear amplifiers

Specifications

Parameter Value Collector-Emitter Voltage (V<sub>CEO) -80 V Collector Current (I<sub>C) -1 A Power Dissipation (P<sub>D) 1 W Operating Temperature Range (T<sub>op) -55°C to +150°C

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The 2SB1216S-E is built to meet stringent quality standards, ensuring reliability and performance for critical applications. With its robust construction and tested durability, this transistor is designed to withstand the rigors of everyday use in commercial and industrial environments.

For engineers and designers looking for a reliable PNP transistor with excellent performance characteristics, the 2SB1216S-E from ON Semiconductor is an outstanding choice that provides both value and performance.

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