ON Semiconductor 2SC2812-6-TB-H Bipolar Transistor

The 2SC2812-6-TB-H is a high-quality NPN bipolar junction transistor (BJT) from ON Semiconductor, designed for general-purpose amplifier and switching applications. This versatile transistor features a compact design and is housed in a TO-92 package, making it suitable for a wide range of electronic circuits.

With its excellent amplification capabilities, the 2SC2812-6-TB-H provides a continuous collector current of up to 50 mA and a collector-emitter voltage of 50 V, ensuring reliable performance in various applications. The device also boasts a collector-base voltage of 60 V and an emitter-base voltage of 5 V, making it robust for various operating conditions.

One of the key attributes of the 2SC2812-6-TB-H is its low saturation voltage, which enhances its efficiency by minimizing power loss during operation. This feature is particularly beneficial in battery-powered devices, where power conservation is critical. Moreover, the transistor offers a high current gain bandwidth product (fT) of 250 MHz, providing excellent frequency response for amplification of high-speed signals.

The 2SC2812-6-TB-H is also characterized by its high hFE, which is the DC current gain, ranging from 200 to 600. This high gain ensures that the transistor can amplify weak signals effectively, making it ideal for audio amplifiers, signal processing, and other low-level signal applications.

For ease of use, the 2SC2812-6-TB-H comes in a through-hole package, allowing for simple integration into PCBs and breadboards. It is also lead-free and RoHS compliant, aligning with environmental standards and regulations.

In summary, the ON Semiconductor 2SC2812-6-TB-H is a reliable and versatile NPN transistor that offers excellent performance for a variety of electronic applications. Its low saturation voltage, high current gain, and wide bandwidth make it a preferred choice for designers and hobbyists alike who require a dependable general-purpose transistor.