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2SC4852-TB-E

Part No 2SC4852-TB-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer ON Semiconductor
Win Source Part Number 156762-2SC4852-TB-E
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC4852-TB-E CAD Model

Description

2SC4852-TB-E Transistor by ON Semiconductor

The 2SC4852-TB-E is a high-performance NPN bipolar junction transistor (BJT) brought to you by ON Semiconductor, a leading manufacturer in the semiconductor industry. This transistor is designed to meet the needs of a wide range of electronic applications, offering a blend of reliability, efficiency, and versatility.

Key Features

  • High Current Gain Bandwidth Product: The 2SC4852-TB-E boasts a high fT, making it suitable for applications requiring fast switching and high-frequency operation.
  • Low Saturation Voltage: This transistor is designed with low V<sub>CE(sat) characteristics, ensuring efficient operation and reduced power loss during saturation.
  • Complementary PNP Type Available: ON Semiconductor offers a complementary PNP transistor, allowing for easy implementation in push-pull, amplification, and other complementary applications.
  • Surface Mount Package: The transistor comes in a TB package, which is ideal for space-constrained applications and allows for efficient assembly in automated surface mount processes.

Applications

The 2SC4852-TB-E is suitable for a variety of applications, including:

  • Power management circuits
  • Audio amplifiers
  • Signal processing
  • Switching regulators
  • Driver stages in high-fidelity amplifiers and sound equipment

Product Specifications

The 2SC4852-TB-E has the following specifications:

  • Collector-Emitter Voltage (V<sub>CEO): The maximum voltage it can tolerate between the collector and emitter without breakdown.
  • Collector Current (I<sub>C): The maximum continuous current that can flow through the collector.
  • Power Dissipation (P<sub>D): The maximum power that the transistor can dissipate without exceeding the maximum junction temperature.
  • Operating Temperature Range: The range of ambient temperatures over which the transistor can operate safely.

With its robust design and ON Semiconductor's commitment to quality, the 2SC4852-TB-E is an excellent choice for designers looking for a reliable transistor capable of handling demanding applications. Whether you're designing power circuits or audio systems, this component offers the performance and durability required to ensure your product's success.

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