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2SC5551F-TD-E

Part No 2SC5551F-TD-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description BIP NPN 300MA 30V FT=3.5G / Bipolar (BJT) Transistor
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 15157-2SC5551F-TD-E
Ultra Librarian 3D Model Ultra Librarian 2SC5551F-TD-E CAD Model

Description

ON Semiconductor 2SC5551F-TD-E Bipolar Transistor

The ON Semiconductor 2SC5551F-TD-E is a high-performance NPN bipolar transistor designed for use in a variety of electronic applications. This transistor is well-suited for high-speed switching and amplification purposes, making it an ideal choice for audio amplifiers, signal processing, and power management systems.

Constructed with state-of-the-art semiconductor technology, the 2SC5551F-TD-E offers excellent power handling capabilities with a collector-emitter voltage (VCEO) of 160V, which ensures it can handle high-voltage applications with ease. The collector current (IC) rating of 1.5A allows it to drive moderate loads, making it versatile for both low and medium power circuits.

The device features a low collector-emitter saturation voltage (VCE(sat)), which translates to reduced power loss and improved efficiency in operation. This characteristic is particularly beneficial in power-sensitive designs where energy conservation is paramount. Additionally, the high current gain bandwidth product (fT) of this transistor enables it to perform well at high frequencies, offering excellent linearity and signal integrity.

The 2SC5551F-TD-E comes in a compact package, specifically the TO-252 (DPAK) form factor, which is designed for surface-mount technology (SMT). This makes it suitable for modern, densely packed circuit boards where space is at a premium. The package is also designed for optimal heat dissipation, ensuring reliable performance even under strenuous conditions.

ON Semiconductor's commitment to quality is evident in the 2SC5551F-TD-E, with its robust construction and adherence to stringent industry standards. This ensures a long operational life and stable performance across a wide range of temperatures and conditions.

In summary, the ON Semiconductor 2SC5551F-TD-E is a versatile NPN transistor that balances high-voltage and current handling with efficiency and high-frequency performance. Its compact size and power efficiency make it an excellent choice for designers looking to create sophisticated electronic products that require reliable and consistent transistor performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.5075 $60.0600
19+ $6.1608 $117.0552
30+ $5.9679 $179.0370
40+ $5.7750 $231.0000
52+ $5.5833 $290.3316
70+ $5.0058 $350.4060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,491 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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