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2SD1207T-AE

Part No 2SD1207T-AE
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 2A 3MP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 400mV @ 50mA, 1A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 100mA, 2V
Maximum Power Dissipation 1W
Frequency - Transition 150MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package 3-MP
Win Source Part Number 075536-2SD1207T-AE
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SD1207T-AE CAD Model

Description

The 2SD1207T-AE is a high-performance NPN bipolar transistor designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This transistor is part of ON Semiconductor's extensive portfolio of discrete devices, which are known for their reliability and efficiency in a wide range of electronic applications.

Key Features:

  • Transistor Polarity: NPN - This indicates that the transistor is a negative-positive-negative bipolar junction transistor, which is commonly used for amplification and switching purposes.
  • Collector-Emitter Voltage (Vceo): The 2SD1207T-AE is capable of withstanding significant voltage between its collector and emitter terminals, ensuring stable operation in various circuits.
  • Collector Current (Ic): The transistor can handle a considerable amount of current through its collector, making it suitable for driving moderate loads.
  • Power Dissipation (Pd): This parameter indicates the amount of power the transistor can dissipate without exceeding its maximum operating temperature, thus ensuring a reliable performance.
  • DC Current Gain (hFE): The device offers a high DC current gain, which is a measure of the transistor's ability to amplify the input signal.
  • Operating Temperature Range: The 2SD1207T-AE is designed to operate within a specified temperature range, making it suitable for various environmental conditions.
  • Package / Case: The transistor comes in a user-friendly package, which facilitates easy mounting on printed circuit boards (PCBs) and is compatible with standard soldering techniques.

Applications:

The 2SD1207T-AE NPN bipolar transistor is versatile and can be used in various applications, including:

  • Audio frequency amplifier stages
  • Low-speed switching circuits
  • Driver stages in hi-fi amplifiers and television circuits
  • Regulatory functions in power supplies
  • General-purpose switching and amplification

With its robust construction and reliable performance, the 2SD1207T-AE from ON Semiconductor is an excellent choice for designers and engineers seeking a dependable NPN bipolar transistor for their electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,570 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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