ON Semiconductor 2SD1815T-TL-E NPN Transistor

The ON Semiconductor 2SD1815T-TL-E is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile component is well-suited for switching and amplification purposes, thanks to its robust features and reliable performance.

Key Specifications:

• Type: NPN
• Package: SOT-416 (SC-75A)
• Collector-Emitter Voltage (Vceo): 50V
• Collector Current (Ic): 150mA
• Collector Power Dissipation (Pc): 150mW
• DC Current Gain (hFE): 120 to 560
• Transition Frequency (fT): 250MHz
• Operating and Storage Junction Temperature Range: -55°C to +150°C

The 2SD1815T-TL-E transistor is a highly efficient device that offers a collector-emitter voltage of 50V, which allows it to handle moderate voltage applications with ease. With a collector current rating of 150mA, it is capable of driving small loads directly and can be used in the pre-driver stages of high-power amplifiers. The collector power dissipation is rated at 150mW, which enables the transistor to dissipate the heat generated during operation effectively.

This transistor boasts a high current gain, with a range of 120 to 560, ensuring that it can amplify weak signals without significant loss of fidelity. The high transition frequency of 250MHz makes the 2SD1815T-TL-E transistor an excellent choice for applications requiring fast switching and high-frequency operation, such as RF amplification and oscillator circuits.

Constructed in a compact SOT-416 (SC-75A) package, the 2SD1815T-TL-E is designed for space-constrained applications. Its small footprint makes it ideal for portable electronic devices where efficiency and size are critical. Additionally, the operating and storage junction temperature range of -55°C to +150°C ensures stability and reliability across various environmental conditions.

Whether it's for consumer electronics, telecommunication devices, or industrial equipment, the ON Semiconductor 2SD1815T-TL-E NPN transistor is a solid choice for designers looking for a general-purpose transistor that offers a good balance of performance, power handling, and size.