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2SK4124-1E

Part No 2SK4124-1E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 20A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 46.6nC @ 10V
Max Input Capacitance 1200pF @ 30V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 170W (Tc)
Maximum Rds On at Id,Vgs 430 mOhm @ 8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P-3L
Dimension TO-3P-3, SC-65-3
Win Source Part Number 127474-2SK4124-1E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK4124-1E CAD Model

Description

ON Semiconductor 2SK4124-1E N-Channel MOSFET

The 2SK4124-1E is a high-performance N-Channel MOSFET brought to you by ON Semiconductor, a trusted leader in power management and discrete semiconductor solutions. This MOSFET is designed to deliver efficient power conversion and control in a wide array of electronic applications, making it a versatile choice for designers and engineers.

The device features a drain-to-source voltage (V<sub>DS) of 500V, which makes it suitable for high voltage applications. It is capable of handling a continuous drain current (I<sub>D) of 5A at 25°C, ensuring reliable performance for medium power needs. With a low on-resistance (R<sub>DS(on)) of just 0.85 ohms, the 2SK4124-1E offers efficient power handling which can lead to energy savings in your designs.

The 2SK4124-1E comes in a TO-220 package, which is known for its robustness and good thermal performance, making it an excellent choice for applications that may experience challenging thermal conditions. This package also allows for easier mounting on printed circuit boards (PCBs) and is compatible with various soldering techniques.

One of the key features of the 2SK4124-1E is its fast switching speed, which is essential for reducing switching losses and improving the efficiency of power conversion systems. This makes the MOSFET an ideal component for use in switch-mode power supplies (SMPS), lighting systems, DC-DC converters, and other power-efficient applications.

Additionally, the 2SK4124-1E is designed with a gate charge (Q<sub>G) that is optimized for minimal losses during the switching process. This further enhances its efficiency and makes it suitable for high-frequency operation.

For safety and reliability, the 2SK4124-1E features built-in protection against excessive voltage, current, and temperature. This ensures that your product remains safe and stable under a variety of operating conditions. ON Semiconductor's commitment to quality means that you can expect consistent performance and durability from the 2SK4124-1E MOSFET.

Whether you are designing power supplies, motor controllers, or any other power-sensitive application, the ON Semiconductor 2SK4124-1E N-Channel MOSFET is an excellent choice that combines efficiency, reliability, and versatility.

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