ON Semiconductor BC846BPDW1T1G Bipolar Transistor

The BC846BPDW1T1G from ON Semiconductor is a cutting-edge bipolar (BJT) transistor, which is a fundamental component in modern electronics. This particular transistor is designed for general-purpose and low-power applications, making it an ideal choice for a wide range of electronic circuits.

Key Features:

• Device Type: Bipolar Junction Transistor (BJT)
• Configuration: Dual NPN
• Package: SOT-363 (SC-88)
• Collector-Emitter Voltage (Vceo): 65V
• Collector-Base Voltage (Vcbo): 80V
• Emitter-Base Voltage (Vebo): 6V
• Collector Current (Ic): 100mA
• Power Dissipation (Pd): 250mW
• DC Current Gain (hFE): 200 to 450
• Operating Temperature Range: -55°C to +150°C

The BC846BPDW1T1G transistor features a dual NPN configuration, which allows for the integration of two independent NPN transistors within a single package. This not only saves space on the PCB but also simplifies the design and manufacturing process. The compact SOT-363 package ensures minimal footprint and is suitable for high-density board designs.

With a collector-emitter voltage of 65V and a collector current of 100mA, this transistor can handle moderate voltage and current levels, making it versatile for various signal amplification and switching tasks. Additionally, the power dissipation of 250mW ensures that the device can operate efficiently without excessive thermal stress.

The BC846BPDW1T1G boasts a wide operating temperature range, from -55°C to +150°C, allowing reliable performance in extreme conditions. Its excellent DC current gain (hFE) ensures effective current amplification, which is crucial for applications requiring precise control of the current flow.

ON Semiconductor's commitment to quality and performance is evident in the BC846BPDW1T1G transistor, making it a smart choice for designers and engineers looking for reliable and efficient components for their electronic projects.