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BC847CLT1G

Part No BC847CLT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.1A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 300mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 011124-BC847CLT1G
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Automotive
Ultra Librarian 3D Model Ultra Librarian BC847CLT1G CAD Model

Description

ON Semiconductor BC847CLT1G NPN Bipolar Transistor

The BC847CLT1G is a high-quality NPN bipolar junction transistor (BJT) from ON Semiconductor, a leading supplier in the semiconductor industry. This device is designed for general-purpose amplifier applications and is well-suited for a wide range of electronic circuits. With its compact SOT-23 surface-mount package, the BC847CLT1G is ideal for space-constrained applications and is commonly used in commercial and industrial electronic equipment.

Featuring a continuous collector current of 100 mA and a collector-emitter voltage of 45 V, the BC847CLT1G is capable of handling moderate power levels while maintaining low saturation voltages, ensuring efficient operation. It also boasts a high current gain bandwidth product (fT) of 100 MHz, making it suitable for high-frequency applications.

The BC847CLT1G transistor has a low collector-emitter saturation voltage, which contributes to its efficiency by minimizing power loss when in the on-state. Additionally, its low noise figure makes it an excellent choice for audio amplification and sensitive signal processing circuits.

Key features of the BC847CLT1G include:

  • Collector-Emitter Voltage (VCEO): 45 V
  • Collector Current (IC): 100 mA
  • DC Current Gain (hFE): 420 at 2 mA
  • High Gain Bandwidth Product (fT): 100 MHz
  • Low Collector-Emitter Saturation Voltage
  • Low Noise Figure
  • RoHS Compliant
  • SOT-23 Surface-Mount Package

ON Semiconductor's commitment to quality ensures that the BC847CLT1G transistor meets strict industry standards for performance and reliability. This component is RoHS compliant, meaning it is manufactured without the use of hazardous substances, making it an environmentally friendly choice for your electronic designs.

Whether you are designing an amplifier, a switch, or a signal processing circuit, the BC847CLT1G from ON Semiconductor is a reliable and versatile component that delivers consistent performance. Its combination of efficiency, low noise, and high-frequency response makes it a valuable addition to any electronic project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,525+ $0.0142 $50.0550
7,520+ $0.0133 $100.0160
11,630+ $0.0129 $150.0270
16,670+ $0.0120 $200.0400
21,740+ $0.0115 $250.0100
27,030+ $0.0111 $300.0330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 61,880 pieces
MOQ: 3525 pcs
Order Increment : 1 pcs
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