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BD810G

Part No BD810G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 80V 10A TO220  /  Bipolar (BJT) Transistor PNP 80 V 10 A 1.5MHz 90 W Through Hole TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Tube
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 10 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 1.1V @ 300mA, 3A
Current - Collector Cutoff (Max) 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 4A, 2V
Power - Max 90 W
Frequency - Transition 1.5MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Base Product Number BD810
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-BD810G-OS,ONSONSBD810G
Standard Package 50
Win Source Part Number 997149-BD810G
Ultra Librarian 3D Model Ultra Librarian BD810G CAD Model

Description

ON Semiconductor BD810G Bipolar Power Transistor

The ON Semiconductor BD810G is a high-performance bipolar power transistor designed to cater to a wide array of applications requiring efficient power control and amplification. This device is part of the BD series of transistors, which are well-known for their reliability and versatility in various electronic circuits. The BD810G offers a perfect solution for designers looking for a robust component that can handle significant power levels while maintaining thermal stability.

Constructed with an epitaxial planar design, the BD810G features a PNP configuration, making it suitable for use in power switching circuits, audio amplifiers, and other general-purpose applications. The transistor is capable of withstanding a collector-emitter voltage (VCEO) of up to 60V, providing a sufficient voltage range for numerous electronic designs. Its collector current rating of 7A ensures that it can drive moderate to high current loads without overheating or failure.

The BD810G boasts a power dissipation of 40W, which is a testament to its ability to handle substantial power levels while operating efficiently. This characteristic is particularly beneficial in applications where the transistor is expected to manage continuous power without compromising performance. Additionally, the device features a high DC current gain (hFE) range, which enhances its ability to amplify weak signals in various circuits.

ON Semiconductor has packaged the BD810G in a TO-220 configuration, a widely used and easily mountable package that simplifies the integration of the transistor into printed circuit boards (PCBs). This package also provides excellent thermal conduction properties, allowing the device to dissipate heat effectively during operation.

Overall, the ON Semiconductor BD810G is a reliable and efficient solution for designers and engineers looking to incorporate a high-quality power transistor into their electronic systems. With its robust performance characteristics and proven design, the BD810G is sure to deliver the results expected in demanding power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2070 $60.3500
120+ $0.9898 $118.7760
185+ $0.9598 $177.5630
250+ $0.9286 $232.1500
325+ $0.8974 $291.6550
435+ $0.8050 $350.1750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,385 pieces
In Stock: 1,371 pieces Factory Stock: 14 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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