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ECH8651R-TL-HX

Part No ECH8651R-TL-HX
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 24V 10A ECH8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 10A
Maximum Rds On at Id,Vgs 14 mOhm @ 5A, 4.5V
Max Gate Charge 24nC @ 10V
Maximum Power Dissipation 1.5W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-ECH
Win Source Part Number 203510-ECH8651R-TL-HX
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ECH8651R-TL-HX CAD Model

Description

Product Overview: ECH8651R-TL-HX

The ECH8651R-TL-HX is a high-performance, dual P-Channel MOSFET designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This product is tailored for power management applications and is known for its efficiency and reliability in a variety of electronic devices.

Key Features

  • Low On-Resistance: The ECH8651R-TL-HX features a low on-resistance, which reduces power loss and improves efficiency in electronic circuits.
  • High-Speed Switching: It is capable of high-speed switching, making it ideal for applications that require fast response times.
  • Dual MOSFET Configuration: This device contains two P-Channel MOSFETs in a single package, which saves space and simplifies design in compact circuit layouts.
  • Lead-Free and Halogen-Free: The ECH8651R-TL-HX is both lead-free and halogen-free, complying with environmental regulations and promoting sustainability.

Applications

The versatility of the ECH8651R-TL-HX allows it to be used in a wide range of applications, including but not limited to:

  • Power Management Systems
  • DC/DC Converters
  • Load Switches
  • Battery Management
  • Portable Devices

Product Specifications

The ECH8651R-TL-HX boasts the following specifications:

  • Package: The device comes in a compact TSMT6 package, which is suitable for surface-mount technology (SMT).
  • Drain-Source Voltage (V<sub>DS): It supports a drain-source voltage of up to -30V, ensuring it can handle a range of power requirements.
  • Continuous Drain Current (I<sub>D): The MOSFET provides a continuous drain current of -6A, enabling it to power a variety of electronic components.
  • Power Dissipation (P<sub>D): It has a power dissipation of 1.5W, which helps to maintain operational stability during high-power applications.
  • Operating Temperature: The device operates effectively within a temperature range of -55°C to +150°C, ensuring reliability under various environmental conditions.

With its robust design and adherence to ON Semiconductor's quality standards, the ECH8651R-TL-HX is an excellent choice for designers seeking a reliable dual P-Channel MOSFET for their power management solutions.

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