The FDB86360-F085, manufactured by ON Semiconductor, is a state-of-the-art N-Channel PowerTrench® MOSFET designed for high-efficiency power conversion and switching applications. This device promises to deliver superior performance in terms of low on-resistance, high switching speeds, and exceptional thermal characteristics, making it a popular choice among engineers and designers for a wide range of power management tasks.

Key Features

• Low On-Resistance: The FDB86360-F085 boasts an extremely low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power circuits.
• High-Speed Switching: With its PowerTrench technology, the device ensures fast switching speeds, thereby minimizing switching losses and enabling high-frequency operation.
• Robust Thermal Performance: The MOSFET is designed with an optimal thermal footprint, ensuring effective heat dissipation and reliable performance even under high-temperature conditions.
• High Current Handling: It is capable of handling high current loads, making it suitable for demanding applications that require robust power handling capabilities.

Applications

The versatility of the FDB86360-F085 allows it to be used in a wide array of applications, including:

• DC/DC converters
• Power supply units
• Motor drives
• Automotive systems
• Synchronous rectification
• Load switch applications

Technical Specifications

The FDB86360-F085 comes with an impressive set of specifications that highlight its performance capabilities:

• Drain-Source Voltage (V<sub>DS): 80V
• Continuous Drain Current (I<sub>D): 80A
• Power Dissipation (P<sub>D): 83.3W
• R<sub>DS(on): 2.5mΩ at V<sub>GS = 10V
• Operating Temperature Range: -55°C to +175°C

Quality and Reliability

ON Semiconductor is committed to providing high-quality components that meet rigorous industry standards. The FDB86360-F085 is no exception, and it is built to deliver consistent performance and longevity, ensuring customer satisfaction and trust in ON Semiconductor's products.