The FDD13AN06A0-F085 is a high-performance N-Channel PowerTrench<sup>® MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to maximize power efficiency and reliability, making it an ideal choice for a wide range of power management applications.

Key Features

• Low On-Resistance: With an R<sub>DS(on) of just 8.5 mΩ at V<sub>GS = 10 V, this MOSFET ensures minimal power loss during operation, making it suitable for high-efficiency power supplies.
• High Continuous Drain Current: The device supports a continuous drain current (I<sub>D) of 88 A, providing robust performance for demanding applications.
• PowerTrench<sup>® Technology: ON Semiconductor's proprietary PowerTrench<sup>® technology is engineered to optimize the trade-off between on-resistance and gate charge, enhancing the overall efficiency of the MOSFET.
• Fast Switching Speed: The fast switching capability reduces switching losses and improves performance in applications such as DC/DC converters and motor drives.
• High Performance Packaging: Housed in a robust and compact TO-252 (DPAK) package, the FDD13AN06A0-F085 is designed for space-constrained applications while providing excellent thermal characteristics.

Applications

The versatility of the FDD13AN06A0-F085 MOSFET makes it suitable for a variety of applications, including:

• Power supply units (PSUs)
• DC/DC converters
• Battery management systems
• Motor drives and controllers
• Switching regulators
• Load switches

Quality and Reliability

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The FDD13AN06A0-F085 MOSFET is subjected to rigorous testing and quality control procedures to ensure it meets the stringent requirements of industrial and commercial applications.

For detailed specifications, technical documentation, and application support, visit ON Semiconductor's official website or contact their customer support team.