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FFSH20120A

Part No FFSH20120A
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 1.2KV 30A TO247-2 / Silicon Carbide Schottky Diode
Datasheet
Sample
Rohs State rohs
ECAD Module
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Manufacturer ON Semiconductor
Packaging Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Maximum) 1200V
Current - Average Rectified (Io) 30A (DC)
Voltage - Forward (Vf) (Maximum) at If 1.75V at 20A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage at Vr 200μA at 1200V
Capacitance at Vr, F 1220pF at 1V, 100KHz
Mounting Style Through Hole
Manufacturer Package TO-247-2
Supplier Device Package TO-247-2
Manufacturer Pack Quantity 450
MSL Level Not Applicable
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 804273-FFSH20120A
Ultra Librarian 3D Model Ultra Librarian FFSH20120A CAD Model

Description

The ON Semiconductor FFSH20120A is a cutting-edge Silicon Carbide (SiC) Schottky diode that offers superior performance in a variety of power applications. Designed to handle high surge currents without degradation, this device is a perfect choice for systems that demand high efficiency, reliability, and thermal management.

Key Features

  • High Blocking Voltage: With a 1200V rating, the FFSH20120A provides ample headroom for high-voltage applications, ensuring safe operation and long-term reliability.
  • Low Forward Voltage: The low V<sub>F characteristic of this SiC Schottky diode results in reduced power loss during conduction, enhancing overall system efficiency.
  • Zero Reverse Recovery Time: The absence of reverse recovery in SiC diodes eliminates switching losses and reduces electromagnetic interference (EMI), which is critical for high-speed switching applications.
  • High-Temperature Operation: Capable of operating at junction temperatures up to 175°C, the FFSH20120A is ideal for environments where thermal management is challenging.
  • Robust Surge Capability: Engineered to withstand high surge currents, this diode is well-suited for applications that may experience transient over-voltage conditions.

Applications

The ON Semiconductor FFSH20120A is versatile and can be used in a wide range of applications, including but not limited to:

  • Power supply units (PSUs)
  • Power inverters and converters
  • Electric vehicle (EV) charging stations
  • Solar power inverters
  • Uninterruptible power supplies (UPS)
  • High-frequency power circuits

Product Summary

The FFSH20120A from ON Semiconductor represents a significant advancement in SiC diode technology. Its exceptional performance characteristics make it an excellent choice for designers looking to improve efficiency, reduce thermal challenges, and enhance system reliability in their power conversion and management applications. With its robust design and high surge current capability, the FFSH20120A is poised to meet the demands of the most challenging electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.1885 $60.9425
10+ $10.0009 $100.0090
16+ $9.6883 $155.0128
22+ $9.3758 $206.2676
28+ $9.0633 $253.7724
37+ $8.1257 $300.6509
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,487 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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