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FGA50S110P

Part No FGA50S110P
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description 1100 V, 50 A Shorted-anode IGBT | IGBT 1100V 50A 300W TO3PN
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 1100V
Current - Collector (Ic) (Maximum) 50A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Maximum) at Vge, Ic 2.6V at 15V, 50A
Maximum Power 300W
Input Type Standard
Gate Charge 195nC
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-3P-3, SC-65-3
Supplier Device Package TO-3PN
Manufacturer Pack Quantity 450
MSL Level 1 (Unlimited)
Win Source Part Number 1174164-FGA50S110P
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FGA50S110P CAD Model

Description

Overview of ON Semiconductor FGA50S110P

The FGA50S110P is a high-performance Field Stop IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by ON Semiconductor. This IGBT is engineered to deliver efficient and reliable performance for a wide range of power switching applications. The device is well-suited for applications such as motor drives, uninterruptible power supplies (UPS), inverters, and other power conversion systems that require high efficiency, fast switching, and robustness.

Key Features and Benefits

  • High Current Capability: The FGA50S110P is capable of handling continuous currents up to 50A, making it suitable for high-power applications.
  • High Voltage Rating: With a collector-emitter voltage (Vce) rating of 1100V, this IGBT can be used in circuits with high operating voltages, providing a wide safety margin and excellent reliability.
  • Low On-State Voltage Drop (Vce(sat)): The device exhibits a low on-state voltage drop, which translates to reduced conduction losses and improved overall efficiency in applications.
  • Fast Switching Speed: The fast switching characteristics of the FGA50S110P help to minimize switching losses and enable high-frequency operation, which is essential for efficient power conversion.
  • Co-Packaged Free-Wheeling Diode: The IGBT comes with an integrated free-wheeling diode, providing a compact solution and simplifying circuit design by reducing the number of components required.
  • Robustness: The device features a robust and rugged design, ensuring reliable operation even under demanding conditions.

Applications

Due to its high efficiency and reliability, the FGA50S110P is ideal for a variety of applications, including:

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Power inverters for renewable energy systems
  • Power factor correction (PFC) circuits
  • Induction heating
  • Welding equipment

Package and Quality Assurance

The FGA50S110P is offered in a TO-3P package, which provides excellent thermal performance and is suitable for through-hole mounting. ON Semiconductor ensures the highest quality and reliability of its IGBTs, and the FGA50S110P is no exception. It is designed to meet stringent industry standards, ensuring long-term performance and durability for the end-users.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.6773 $58.9006
53+ $2.1968 $116.4304
82+ $2.1287 $174.5534
113+ $2.0594 $232.7122
146+ $1.9912 $290.7152
195+ $1.7856 $348.1920
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Availability: 6,000 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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