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FGHL75T65MQDT

Part No FGHL75T65MQDT
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description FS4 MID SPEED IGBT 650V 75A TO24
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr onsemi
Series -
Package Tube
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 300 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 75A
Power - Max 375 W
Switching Energy 2.35mJ (on), 1.25mJ (off)
Input Type Standard
Gate Charge 149 nC
Td (on/off) @ 25°C 24ns/118ns
Test Condition 400V, 75A, 4.7Ohm, 15V
Reverse Recovery Time (trr) 107 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376596-FGHL75T65MQDT
Ultra Librarian 3D Model Ultra Librarian FGHL75T65MQDT CAD Model

Description

The ON Semiconductor FGHL75T65MQDT is a state-of-the-art insulated gate bipolar transistor (IGBT) designed for high-efficiency and high-speed switching applications. This IGBT is part of ON Semiconductor's portfolio of energy-efficient devices, which are crafted to meet the demanding requirements of modern electronic systems. The FGHL75T65MQDT is optimized for use in a variety of applications, including inverters, converters, motor drives, and power management systems.

With a collector-emitter voltage (Vce) of 650V and a continuous collector current (Ic) rating of 75A at 25°C, this IGBT is capable of handling significant power levels. Its maximum junction temperature of 175°C allows for operation in high-temperature environments, ensuring reliability and longevity in harsh conditions.

The FGHL75T65MQDT features a low on-state voltage drop (Vce(sat)) which reduces conduction losses and improves overall system efficiency. Additionally, it boasts a fast switching speed, which minimizes switching losses, further enhancing the efficiency of the systems in which it is used. This combination of low conduction and switching losses makes the FGHL75T65MQDT an excellent choice for energy-sensitive applications.

ON Semiconductor has integrated a rugged, soft-recovery diode into the design. This diode provides protection against over-voltage conditions and ensures smooth recovery from high-current pulses. The device also includes an advanced trench gate field-stop technology, which helps to achieve superior performance by reducing gate charge and improving avalanche ruggedness.

The FGHL75T65MQDT comes in a TO-247 package, which is known for its high power dissipation capability. The package is designed to be easily mountable on a heatsink, which is critical for maintaining thermal stability and extending the life of the IGBT.

In summary, the ON Semiconductor FGHL75T65MQDT IGBT is an excellent choice for designers looking to optimize their power systems for efficiency and reliability. With its high current handling, low loss characteristics, and robust design, it stands as a testament to ON Semiconductor's commitment to delivering high-performance power solutions.

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Quantity Unit Price Ext. Price
10+ $5.0597 $50.5970
25+ $4.1515 $103.7875
38+ $4.0218 $152.8284
52+ $3.8920 $202.3840
67+ $3.7623 $252.0741
89+ $3.3731 $300.2059
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Availability: 20,000 pieces
MOQ: 10 pcs
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