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FGY60T120SQDN

Part No FGY60T120SQDN
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 60A UFS / IGBT 1200 V 120 A 517 W Through Hole TO-247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer onsemi
Packaging Tube
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 120 A
Current - Collector Pulsed (Icm) 240 A
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 60A
Power - Max 517 W
Input Type Standard
Gate Charge 311 nC
Td (on/off) @ 25°C 52ns/296ns
Test Condition 600V, 60A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Through Hole
Case / Package TO-247-3 Variant
Supplier Device Package TO-247-3
Base Product Number FGY60
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number FGY60T120SQDNOS,FGY60T120SQDN-ND
Standard Package 30
Win Source Part Number 1324946-FGY60T120SQDN
Ultra Librarian 3D Model Ultra Librarian FGY60T120SQDN CAD Model

Description

Product Overview: FGY60T120SQDN from ON Semiconductor

The FGY60T120SQDN is a cutting-edge IGBT (Insulated Gate Bipolar Transistor) developed by ON Semiconductor, a leader in energy-efficient innovations. This high-performance semiconductor device is designed to cater to a wide array of power applications, particularly those requiring high efficiency and fast switching.

Featuring a robust and durable design, the FGY60T120SQDN offers an optimal balance between conduction and switching losses, making it an ideal choice for high-frequency operations. The device is capable of handling a collector current of up to 60A and boasts a collector-emitter voltage of 1200V, ensuring reliable performance even under demanding conditions.

The FGY60T120SQDN incorporates ON Semiconductor's proprietary Field Stop Trench technology, which significantly enhances its voltage-blocking capability while minimizing on-state voltage drop. This technology also contributes to the IGBT's exceptional ruggedness and thermal performance. With a low total gate charge and reduced EMI emissions, the FGY60T120SQDN ensures efficient energy use and is well-suited for applications that require minimal interference.

This IGBT is designed to be user-friendly, featuring a co-packaged free-wheeling diode with a soft recovery characteristic. This inclusion simplifies the design process for engineers by reducing the number of components required in the circuit. The device is also RoHS compliant, underlining ON Semiconductor's commitment to environmental sustainability.

Applications for the FGY60T120SQDN are diverse and include solar inverters, uninterruptible power supplies (UPS), industrial drives, and induction heating systems. Its robustness and efficiency make it a go-to component for engineers looking to optimize their power designs for both performance and reliability.

In summary, the FGY60T120SQDN from ON Semiconductor represents a state-of-the-art solution for power switching applications, offering high efficiency, fast switching, and a design that meets the demands of modern energy management and conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.9459 $59.6754
13+ $9.3042 $120.9546
20+ $8.9834 $179.6680
28+ $8.3418 $233.5704
36+ $8.0209 $288.7524
45+ $7.7001 $346.5045
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,120 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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