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FMC33202DR2G

Part No FMC33202DR2G
Manufacturer ON Semiconductor
Catalog Unclassified
Description ANA LO-V / R-R DUAL OA
Sample
Rohs State rohs
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Category Uncategorized - Unclassified
Mfr ON Semiconductor
Series *
Product Status Obsolete
Base Product Number FMC33
Standard Package 1 pcs
Moisture Sensitivity Level (MSL) Not Applicable
REACH Status REACH Unaffected
ECCN OBSOLETE
HTSUS 0000.00.0000
Win Source Part Number 1059416-FMC33202DR2G
Ultra Librarian 3D Model Ultra Librarian FMC33202DR2G CAD Model

Description

ON Semiconductor FMC33202DR2G Overview

The FMC33202DR2G is a high-performance, dual N-channel PowerTrench® MOSFET designed by ON Semiconductor, a leading provider of semiconductor solutions. This product is engineered to deliver efficient power management and is suitable for a wide range of applications including DC-DC converters, power supplies, and motor control circuits.

Key Features

  • Low On-Resistance: The FMC33202DR2G boasts an exceptionally low on-resistance, which reduces power loss and improves overall efficiency in applications.
  • High Current Handling: With the capability to handle high currents, this MOSFET can manage demanding power requirements with ease.
  • PowerTrench® Technology: Incorporating ON Semiconductor's advanced PowerTrench® technology, the FMC33202DR2G ensures minimal gate charge and low gate resistance, leading to reduced switching losses.
  • Dual N-Channel Configuration: The dual N-channel setup allows for flexibility in design and can be used in synchronous rectification schemes.
  • Compact Size: Housed in a small form factor package, the FMC33202DR2G is ideal for space-constrained applications.

Applications

The versatility of the FMC33202DR2G makes it a suitable choice for a variety of electronic designs, particularly where power efficiency and space savings are critical. Its applications include:

  • High-efficiency DC-DC converters
  • Power management modules
  • Brushless DC motor controls
  • Computing and telecom power systems
  • Battery-powered devices

Product Specifications

The FMC33202DR2G operates with a continuous drain current (ID) of up to 6.5 A and a pulsed drain current (IDM) that ensures robust performance during transient conditions. It has a maximum power dissipation (PD) that accommodates higher power applications, and the device is characterized by a wide operating temperature range, making it reliable in various environmental conditions.

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the FMC33202DR2G is no exception. It is designed to meet stringent industry standards, ensuring long-term reliability and performance in critical applications. Customers can trust the FMC33202DR2G for their power management needs, benefiting from ON Semiconductor's extensive experience in MOSFET technology.

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