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HUFA76429D3ST

Part No HUFA76429D3ST
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET® Power MOSFETs | MOSFET N-CH 60V 20A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 20A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 23mOhm at 20A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 46nC at 10V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 1480pF at 25V
Power Dissipation (Maximum) 110W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package TO-252AA
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Win Source Part Number 1182497-HUFA76429D3ST
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUFA76429D3ST CAD Model

Description

ON Semiconductor HUFA76429D3ST - Robust N-Channel Power MOSFET

The ON Semiconductor HUFA76429D3ST is a high-performance N-Channel Power MOSFET designed for a range of applications that demand high efficiency and reliability. This MOSFET is part of ON Semiconductor's portfolio of power management solutions, which are known for their quality and performance.

Key Features:

  • Low On-Resistance: The HUFA76429D3ST boasts an extremely low on-resistance (R<sub>DS(on)), which enhances its efficiency in conducting electricity, thereby reducing power losses during operation.
  • High Current Capability: With the ability to handle high currents, this MOSFET is suitable for demanding power applications, ensuring robust performance even under strenuous conditions.
  • High-Speed Switching: Designed for fast switching applications, the HUFA76429D3ST minimizes transition losses and allows for efficient operation at high frequencies.
  • Thermal Stability: The device is engineered to maintain its performance over a wide temperature range, ensuring reliability in various operating conditions.
  • Logic Level Gate Drive: Its logic level gate drive enables it to be driven by low voltage logic circuits, simplifying the design of the driving circuitry.

Applications:

The HUFA76429D3ST is versatile and can be utilized in a multitude of applications, including:

  • Power Supply Units (PSUs)
  • DC-DC Converters
  • Motor Drives
  • Automotive Applications
  • LED Lighting
  • Switch Mode Power Supplies (SMPS)

Package and Quality:

This MOSFET comes in a surface-mount package which allows for efficient assembly in high-density PCB designs. ON Semiconductor's commitment to quality ensures that the HUFA76429D3ST meets stringent industry standards for performance and reliability.

In summary, the HUFA76429D3ST from ON Semiconductor is a powerful N-Channel MOSFET that combines low on-resistance, high current handling, and fast switching speeds, making it an excellent choice for designers who require a reliable component for their high-efficiency power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,759 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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