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KSA709GBU

Part No KSA709GBU
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 150V 0.7A TO92-3  /  Bipolar (BJT) Transistor PNP 150 V 700 mA 50MHz 800 mW Through Hole TO-92-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Bulk
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 700 mA
Voltage - Collector Emitter Breakdown (Max) 150 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 50mA, 2V
Power - Max 800 mW
Frequency - Transition 50MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Base Product Number KSA709
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 1,000
Win Source Part Number 1067952-KSA709GBU
Ultra Librarian 3D Model Ultra Librarian KSA709GBU CAD Model

Description

ON Semiconductor KSA709GBU PNP Transistor

The KSA709GBU is a high-quality PNP transistor produced by ON Semiconductor, a leading provider of semiconductor-based solutions. This bipolar junction transistor (BJT) is designed for general-purpose amplification and switching applications and comes in a compact TO-92 package, which makes it suitable for use in a wide range of electronic circuits.

The KSA709GBU transistor is characterized by its low saturation voltage and high current gain, which ensures efficient operation even in low voltage applications. It boasts a collector-base voltage (VCBO) of -40V, a collector-emitter voltage (VCEO) of -20V, and a collector current (IC) of -150mA, making it an excellent choice for moderate power handling requirements.

One of the key features of the KSA709GBU is its excellent linearity, which allows for precise control over the amplification process, making it ideal for audio applications, signal processing, and other analog circuits where fidelity is crucial. Additionally, its low noise figure makes it suitable for use in sensitive audio and RF amplification circuits.

The device also offers good thermal performance, ensuring stability and reliability over a wide temperature range. The KSA709GBU can operate at junction temperatures ranging from -55°C to +150°C, which means it can be used in various environmental conditions without compromising performance.

ON Semiconductor's commitment to quality is evident in the KSA709GBU, which is manufactured to high standards to ensure consistent performance and longevity. It is a versatile component that can be used as a switch or amplifier in a variety of applications, including consumer electronics, power management systems, and industrial controls.

For engineers and designers looking for a reliable PNP transistor with a good balance of speed, power, and precision, the KSA709GBU is an excellent choice. Its robustness and versatility make it a valuable component in both prototyping and production phases of electronic design.

With the KSA709GBU, ON Semiconductor continues its tradition of providing high-performance semiconductor devices that meet the evolving needs of the electronics industry.

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