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MJD117G

Part No MJD117G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP DARL 100V 2A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
Transistor Polarity PNP - Darlington
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 3V @ 40mA, 4A
Collector Cut-off Current(Max) 20μA
Typical Gain (hFE) (Min) 1000 @ 2A, 3V
Maximum Power Dissipation 1.75W
Frequency - Transition 25MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Win Source Part Number 208441-MJD117G
Ultra Librarian 3D Model Ultra Librarian MJD117G CAD Model

Description

ON Semiconductor MJD117G PNP Power Transistor

The MJD117G is a high-performance PNP power transistor from ON Semiconductor, a leading provider of semiconductor-based solutions. This power transistor is designed to deliver efficiency and reliability for a wide range of applications, making it a versatile component for designers and engineers. The MJD117G is part of ON Semiconductor's power transistor portfolio, which features devices known for their quality and performance.

The MJD117G boasts a robust power dissipation of 20W, which allows it to handle significant levels of power without compromising on performance. This characteristic makes it an ideal choice for power amplification and switching applications where thermal management is a critical factor. With a collector-emitter voltage (VCEO) of -100V, the device can support applications that require high voltage handling capabilities.

One of the key features of the MJD117G is its high DC current gain (hFE), which typically ranges from 30 to 240 at IC = -2.0A. This high gain ensures that the transistor can amplify weak signals effectively, making it suitable for audio amplifiers, signal processing, and other applications that require precise control of current flow. Additionally, the device can handle a continuous collector current (IC) of up to -2.0A, which allows for robust operation in high-demand environments.

The MJD117G comes in a surface-mount DPAK package, which not only saves valuable board space but also facilitates better heat dissipation compared to traditional packages. This packaging, combined with the device's high operating junction temperature range of -55°C to +150°C, ensures that the MJD117G can perform reliably even in harsh temperature conditions.

With its fast switching speeds and low saturation voltage, the MJD117G is an efficient solution for power management tasks. It is commonly used in linear and switching applications, including power regulators, converters, motor controls, and other power-intensive circuits.

ON Semiconductor's commitment to environmental sustainability is reflected in the MJD117G, as it is a Pb-free, Halogen-free, and RoHS compliant product. This commitment ensures that the device not only meets current environmental regulations but also aligns with the increasing demand for eco-friendly electronic components.

In summary, the MJD117G PNP power transistor from ON Semiconductor is a reliable and efficient component that is well-suited for a variety of applications that require high power handling, fast switching, and precise current control.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7438 $52.0660
145+ $0.6959 $100.9055
225+ $0.6719 $151.1775
325+ $0.6239 $202.7675
420+ $0.5999 $251.9580
525+ $0.5759 $302.3475
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Availability: 71 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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