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MJD253T4G

Part No MJD253T4G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Trans GP BJT PNP 100V 4A 1400mW 3-Pin(2+Tab) DPAK T/R / TRANS PNP 100V 4A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 4A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 600mV @ 100mA, 1A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 40 @ 200mA, 1V
Maximum Power Dissipation 1.4W
Frequency - Transition 40MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Win Source Part Number 003604-MJD253T4G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name MJD253
Introduction Date April 12, 2001
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian MJD253T4G CAD Model

Description

Product Overview: MJD253T4G - ON Semiconductor

The MJD253T4G from ON Semiconductor is a state-of-the-art PNP bipolar power transistor designed for general-purpose amplifier and switching applications. This product is well-suited for a range of electronic devices, providing reliable performance and efficiency.

Key Features

  • High Current Rating: The MJD253T4G is capable of handling continuous collector currents up to 6A, making it ideal for high-power applications.
  • High Voltage Tolerance: With a collector-emitter voltage (VCEO) of -100V, this transistor can be used in circuits with high voltage requirements.
  • Low Saturation Voltage: This feature ensures minimal voltage drop and power loss when the transistor is in the on state, thus improving overall efficiency.
  • Power Dissipation: It has a power dissipation of 20W, which enables the device to handle significant power without overheating.
  • Fast Switching Speed: The MJD253T4G is designed for applications requiring fast switching, which is crucial for efficient operation in high-frequency circuits.
  • Package: It comes in a DPAK (TO-252) surface-mount package, which is compact and suitable for automated assembly processes.

Applications

The versatility of the MJD253T4G transistor allows it to be used in a wide range of applications, including:

  • Power management in consumer electronics
  • Motor control circuits
  • Linear amplification and switching
  • Power supply regulation
  • Automotive and telecommunication infrastructure

Reliability and Quality

ON Semiconductor is committed to delivering high-quality products. The MJD253T4G is manufactured with rigorous quality control measures and is designed to meet or exceed industry standards for performance and reliability. Its robust construction ensures long-term stability and operation even under challenging conditions.

In summary, the MJD253T4G is a reliable and efficient PNP power transistor that offers a blend of high performance, fast switching, and a compact footprint, making it a smart choice for designers and engineers looking to optimize their power circuitry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
305+ $0.1652 $50.3860
650+ $0.1548 $100.6200
1,005+ $0.1495 $150.2475
1,440+ $0.1391 $200.3040
1,870+ $0.1339 $250.3930
2,335+ $0.1286 $300.2810
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 65,000 pieces
MOQ: 305 pcs
Order Increment : 1 pcs
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