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MJE171

Part No MJE171
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description POWER TRANSISTORS(3.0A,40-80V,12.5W) | TRANS PNP 60V 3A TO225AA
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Maximum) 3A
Voltage - Collector Emitter Breakdown (Maximum) 60V
Vce Saturation (Maximum) at Ib, Ic 1.7V at 600mA, 3A
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 50 at 100mA, 1V
Maximum Power 12.5W
Frequency - Transition 50MHz
Temperature Range - Operating -65°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-225AA, TO-126-3
Supplier Device Package TO-225AA
Family Part Number MJE171
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1223706-MJE171
Manufacturer Homepage www.mospec.com.tw
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MJE171 CAD Model

Description

ON Semiconductor MJE171 - Power Transistor

The MJE171 from ON Semiconductor is a high-performance PNP power transistor designed for a variety of applications that require efficient and reliable power control. This versatile component is well-suited for use in power amplifiers, voltage regulators, switching circuits, and other power management tasks.

With its robust construction, the MJE171 offers a continuous collector current (Ic) rating of 3A, which enables it to handle significant power levels. The device operates at a collector-emitter voltage (Vceo) of up to 80V, providing a wide operating range for various circuit designs. Furthermore, the transistor has a collector-base voltage (Vcbo) of 100V and an emitter-base voltage (Vebo) of 5V, ensuring stable performance under different voltage conditions.

The MJE171 features a low saturation voltage, which minimizes power loss and improves efficiency in the circuit. This characteristic is particularly important in applications where energy conservation is a priority. Additionally, the component has a fast switching speed that contributes to its efficiency and makes it suitable for high-frequency operations.

ON Semiconductor has designed the MJE171 with a TO-225 package, which is known for its compact size and excellent thermal performance. The package's design ensures that the transistor can dissipate heat effectively, maintaining reliability even under high power conditions or in compact spaces. This makes the MJE171 an ideal choice for designs where space is at a premium and thermal management is crucial.

For ease of integration into various circuits, the MJE171 is complemented by a comprehensive datasheet that provides detailed electrical characteristics, mechanical data, and application notes. Designers and engineers can rely on this information to optimize the use of the transistor in their projects.

In summary, the ON Semiconductor MJE171 is a high-quality PNP power transistor that offers a combination of power handling, efficiency, and compact packaging. It is a reliable choice for designers looking to create robust power management solutions in a wide range of electronic applications.

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