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MMBT4126LT1

Part No MMBT4126LT1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description General Purpose Transistor PNP Silicon | TRANS PNP 25V 0.2A SOT23
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Cut Tape (CT)
Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Maximum) 200mA
Voltage - Collector Emitter Breakdown (Maximum) 25V
Vce Saturation (Maximum) at Ib, Ic 400mV at 5mA, 50mA
DC Current Gain (hFE) (Minimum) at Ic, Vce 120 at 2mA, 1V
Maximum Power 225mW
Frequency - Transition 250MHz
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Family Part Number MMBT4126
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1224976-MMBT4126LT1
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MMBT4126LT1 CAD Model

Description

ON Semiconductor MMBT4126LT1 PNP Transistor

The MMBT4126LT1 is a high-performance PNP bipolar transistor from ON Semiconductor, a leading provider of semiconductor-based solutions. This small-signal transistor is designed for general-purpose amplification and switching applications, offering a blend of reliability and efficiency in a compact package. It is particularly suitable for automation, power management, and signal processing applications where space is at a premium and performance cannot be compromised.

Key Features:

  • Type: PNP Bipolar Transistor
  • Package: SOT-23 Surface-Mount
  • Collector-Emitter Voltage (Vceo): 25V
  • Collector Current (Ic): 200mA
  • Power Dissipation (Pd): 350mW
  • DC Current Gain (hFE): 100 to 300 at 10mA Vce
  • Transition Frequency (fT): 50MHz
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

With its SOT-23 package, the MMBT4126LT1 is designed for surface-mount technology (SMT), allowing for efficient assembly and space-saving on printed circuit boards (PCBs). Its small form factor is an advantage in portable and space-constrained applications.

The device's collector-emitter voltage of 25V and collector current capability of 200mA make it a versatile choice for a wide array of applications. It can handle moderate power levels with a power dissipation rating of 350mW, ensuring stable operation under various conditions.

The MMBT4126LT1 boasts a high current gain bandwidth product, with a transition frequency of 50MHz, making it suitable for amplification in RF and high-speed signal processing applications. Its high DC current gain (hFE) ensures that it can be driven with low base currents, thus reducing power consumption.

ON Semiconductor's commitment to quality is evident in the MMBT4126LT1's robust operating temperature range, ensuring reliability across a wide spectrum of environmental conditions. The product is also designed with the industry's environmental standards in mind, offering lead-free and RoHS-compliant construction.

Whether you're designing energy-efficient power management systems or sophisticated signal processing circuits, the MMBT4126LT1 PNP transistor is an excellent choice for your needs, combining ON Semiconductor's trusted manufacturing expertise with high-performance specifications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
620+ $0.0812 $50.3440
1,505+ $0.0666 $100.2330
2,330+ $0.0645 $150.2850
3,200+ $0.0625 $200.0000
4,140+ $0.0604 $250.0560
5,550+ $0.0541 $300.2550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 250,000 pieces
MOQ: 620 pcs
Order Increment : 1 pcs
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