ON Semiconductor MMBTA55LT1G Bipolar Transistor

The MMBTA55LT1G is a high-performance PNP bipolar (BJT) transistor from ON Semiconductor, designed to offer a blend of efficiency and reliability for a range of electronic applications. This small-signal transistor is a versatile component that finds its use in various amplification and switching tasks within electronic circuits.

Key Features

• Type: PNP Bipolar Junction Transistor (BJT)
• Configuration: Single
• Collector-Emitter Voltage (VCEO): -80V
• Collector-Base Voltage (VCBO): -80V
• Emitter-Base Voltage (VEBO): -5V
• Collector Current (IC): -500mA
• Power Dissipation (Pd): 225mW
• DC Current Gain (hFE): 100 to 300 at IC = -100mA
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23-3

Applications

The MMBTA55LT1G transistor is suitable for a wide range of applications, including but not limited to:

• Signal amplification
• Audio amplifiers
• Switching circuits
• Power management functions
• Driver stages in hi-fi amplifiers and television circuits

Quality and Reliability

ON Semiconductor is well-known for its commitment to quality, and the MMBTA55LT1G is no exception. It is built to meet or exceed industry standards for performance and reliability. The device is also RoHS compliant, meaning it adheres to strict environmental regulations by avoiding the use of hazardous substances.

Compact and Efficient Design

The device's SOT-23-3 package is not only space-saving but also allows for efficient heat dissipation, making it an excellent choice for compact designs where space is at a premium. The MMBTA55LT1G's ability to operate over a wide range of temperatures ensures stability and functionality even under harsh conditions.

Whether you're designing consumer electronics, industrial machinery, or automotive systems, the MMBTA55LT1G offers the performance and reliability you need to ensure your products operate smoothly.