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MMDF1N05ER2G

Part No MMDF1N05ER2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 50V 2A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 2A
Maximum Rds On at Id,Vgs 300 mOhm @ 1.5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 12.5nC @ 10V
Max Input Capacitance 330pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 1078373-MMDF1N05ER2G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMDF1N05ER2G CAD Model

Description

ON Semiconductor MMDF1N05ER2G - Power MOSFET

The MMDF1N05ER2G is a high-performance Power MOSFET brought to you by ON Semiconductor, a trusted name in power management and discrete devices. This particular MOSFET is designed to deliver efficient power control and switching with low on-state resistance, making it an ideal choice for a wide range of applications including power supplies, motor controls, and other power-intensive functions.

The device comes in a compact Micro-8™ package, which not only saves space but also ensures a low thermal resistance, allowing for better heat dissipation. This is crucial for maintaining performance and reliability in applications where the MOSFET is expected to handle high currents or operate in high-temperature environments.

Key Features:

  • Drain-to-Source Voltage (VDSS): 50V, providing a good margin for a variety of applications.
  • Continuous Drain Current (ID): 1.05A at 25°C, ensuring reliable operation under load.
  • Low On-State Resistance (RDS(on)): Minimizes power loss and improves efficiency during operation.
  • High-Speed Switching: Offers fast transition times for more efficient switching applications.
  • Logic Level Gate Drive: Can be driven directly from microcontrollers or other logic devices, simplifying design and reducing component count.

Applications:

The MMDF1N05ER2G is a versatile component that can be used in a variety of electronic circuits. It is especially suitable for:

  • DC/DC Converters
  • Battery Management Systems
  • Power Supply Circuits
  • Motor Control Modules
  • Switch Mode Power Supplies (SMPS)
  • Automotive Applications

ON Semiconductor's commitment to quality ensures that the MMDF1N05ER2G MOSFET meets the rigorous standards required by modern electronic devices. Whether you are designing consumer electronics, industrial systems, or automotive components, this MOSFET will provide the performance and reliability that your projects demand.

In summary, the MMDF1N05ER2G from ON Semiconductor is a robust and efficient solution for your power switching needs. Its combination of low on-state resistance, high-speed switching, and logic level compatibility makes it a smart choice for designers looking to optimize their power management strategies.

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