ON Semiconductor MMUN2216LT1G Bipolar Transistor
The MMUN2216LT1G is a high-quality bipolar (BJT) transistor manufactured by ON Semiconductor, a leader in the semiconductor industry known for its innovative and reliable components. This device is specifically designed to offer excellent performance for a wide range of electronic applications.
Key Features:
- Type: PNP
- Configuration: Single
- Collector-Emitter Voltage (VCEO): 50V
- Collector-Base Voltage (VCBO): 60V
- Emitter-Base Voltage (VEBO): 6V
- Collector Current (IC): 100mA
- Power Dissipation (Pd): 225mW
- DC Current Gain (hFE): 100 to 300 at 10mA, 5V
- Operating and Storage Junction Temperature Range: -55°C to +150°C
- Package: SOT-23
- RoHS: Compliant
The MMUN2216LT1G transistor is encapsulated in a compact SOT-23 surface-mount package, which is highly favored for its small footprint on printed circuit boards (PCBs). This makes it an excellent choice for space-constrained applications. The device is designed for low power consumption, making it suitable for portable and battery-powered devices where energy efficiency is crucial.
With its robust voltage ratings and the ability to handle moderate current, the MMUN2216LT1G can be used in a variety of circuit configurations, including switching and amplification applications. Its high current gain ensures that it can be driven by a small input current, making it ideal for interfacing with microcontrollers and other logic-level devices.
ON Semiconductor's commitment to environmental sustainability is reflected in the RoHS compliance of the MMUN2216LT1G, ensuring that it is free from hazardous substances. The wide operating temperature range allows for reliable operation in extreme conditions, which is essential for industrial and automotive applications.
In summary, the MMUN2216LT1G from ON Semiconductor is a versatile PNP transistor that offers a balance of performance, efficiency, and reliability for designers and engineers looking to incorporate a dependable switching or amplification component into their electronic designs.