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MMUN2231LT1G

Part No MMUN2231LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 246MW SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
Typical Gain (hFE) (Min) 8 @ 5mA, 10V
Max Vce (sat) 250mV @ 5mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 246mW
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 115497-MMUN2231LT1G
Ultra Librarian 3D Model Ultra Librarian MMUN2231LT1G CAD Model

Description

ON Semiconductor MMUN2231LT1G Bipolar Transistor

The MMUN2231LT1G from ON Semiconductor is a high-performance bipolar (BJT) transistor that is designed to deliver efficient amplification and switching capabilities. This PNP transistor is a versatile component commonly used in various electronic applications, including signal processing, power management, and amplification circuits.

Key Features:

  • Device Type: PNP Bipolar Junction Transistor (BJT)
  • Package: SOT-23 Surface-Mount Package for compact design
  • Collector-Emitter Voltage (VCEO): 50V, providing a good range for various applications
  • Collector Current (IC): Up to 100 mA, suitable for moderate power requirements
  • DC Current Gain (hFE): High hFE value ensuring efficient current amplification
  • Operating Temperature Range: -55°C to +150°C, ensuring reliability under extreme conditions
  • Compliance: RoHS compliant, ensuring environmental safety and global acceptance
  • Transition Frequency (fT): High frequency operation capability

Applications:

The MMUN2231LT1G is adept at handling a wide array of applications. Its high gain and low saturation voltage make it suitable for use in:

  • Low power signal amplification
  • Switching and power regulation circuits
  • Audio amplifiers
  • Driver stages in hi-fi amplifiers and television circuits
  • Interface circuits between low-level and high-level signal processing stages

Quality and Reliability:

ON Semiconductor is known for its commitment to quality, and the MMUN2231LT1G is no exception. This transistor is designed and manufactured to meet the stringent requirements of the electronic industry, ensuring high reliability and performance consistency. The SOT-23 package is not only space-efficient but also designed for optimal thermal performance, which contributes to the overall longevity of the device.

Conclusion:

The MMUN2231LT1G from ON Semiconductor is a testament to the company's dedication to providing high-quality electronic components. It is an excellent choice for designers looking for a reliable and efficient PNP transistor for their circuit designs. With its robust feature set, it stands as a solid choice for a wide range of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,145+ $0.0184 $57.8680
7,635+ $0.0152 $116.0520
11,815+ $0.0147 $173.6805
16,265+ $0.0142 $230.9630
21,010+ $0.0138 $289.9380
28,040+ $0.0124 $347.6960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,290 pieces
MOQ: 3145 pcs
Order Increment : 1 pcs
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