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MMUN2241LT1G

Part No MMUN2241LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 246MW SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 100k
Typical Gain (hFE) (Min) 160 @ 5mA, 10V
Max Vce (sat) 250mV @ 5mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 246mW
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 1078501-MMUN2241LT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMUN2241LT1G CAD Model

Description

ON Semiconductor MMUN2241LT1G - NPN Bipolar Digital Transistor (BRT)

The MMUN2241LT1G from ON Semiconductor is a versatile NPN Bipolar Digital Transistor, also known as a Bias Resistor Transistor (BRT), designed to streamline circuit design by incorporating a biasing resistor network into a single package. This device is ideal for use in various digital and switching applications due to its compact SOT-23 package, which is optimized for surface-mount technology, making it suitable for automated assembly processes and space-constrained applications.

The MMUN2241LT1G features a built-in biasing resistor with a resistor ratio of 1:1, which simplifies circuit design by reducing component count. This integrated resistor network ensures that the transistor is properly biased for operation, enhancing performance consistency and reliability. The device has a maximum collector current (Ic) of 100 mA and a collector-emitter voltage (Vceo) of 50V, which allows it to handle moderate power levels while maintaining low saturation voltages.

With a transition frequency (fT) of 250 MHz, the MMUN2241LT1G is capable of high-speed switching, making it suitable for high-frequency applications. The device's hFE (DC current gain) is categorized in groups, ensuring that designers can select the appropriate gain level for their specific application requirements. Additionally, the transistor's low Vce(sat) ensures efficient operation with minimal power loss, which is crucial for battery-powered and energy-sensitive designs.

The MMUN2241LT1G is designed to be a robust and reliable component, with features such as a moisture sensitivity level (MSL) of 1, indicating that it can be exposed to ambient room conditions for an unlimited period without degradation. It also complies with the RoHS directive, making it an environmentally friendly choice for manufacturers looking to meet international standards for hazardous substance control.

In summary, the MMUN2241LT1G from ON Semiconductor is a high-performance NPN Bipolar Digital Transistor that offers designers a compact, efficient, and reliable solution for digital and switching applications. Its integration of bias resistors into a single package simplifies circuit design and helps achieve a more streamlined and cost-effective production process.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,970+ $0.0293 $57.7210
4,785+ $0.0242 $115.7970
7,430+ $0.0233 $173.1190
10,205+ $0.0226 $230.6330
13,230+ $0.0219 $289.7370
17,650+ $0.0196 $345.9400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 1970 pcs
Order Increment : 1 pcs
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