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MUN5114DWT1

Part No MUN5114DWT1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Arrays,Pre - Biased
Manufacturer ON Semiconductor
Win Source Part Number 330969-MUN5114DWT1
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MUN5114DWT1 CAD Model

Description

ON Semiconductor MUN5114DWT1 Bipolar Transistor

The MUN5114DWT1 is a high-performance bipolar transistor from ON Semiconductor, designed to offer excellent current amplification and switching capabilities for a wide range of electronic applications. This versatile component is a perfect choice for designers looking for reliable and efficient solutions in their circuit designs.

Key Features

  • Transistor Type: PNP - Pre-Biased
  • Configuration: Dual
  • Collector- Base Voltage (VCBO): 50V
  • Collector- Emitter Voltage (VCEO): 50V
  • Emitter- Base Voltage (VEBO): 5V
  • Collector Current - Continuous (IC): 100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-88 (SC-70), SOT-363

Product Description

The MUN5114DWT1 is a dual pre-biased PNP transistor that comes in a compact SC-88 (SC-70), SOT-363 package, making it ideal for space-constrained applications. It features a collector-base voltage of 50V and a collector-emitter voltage of 50V, providing ample headroom for a variety of uses. The collector current is rated at a continuous 100mA, which is sufficient for small signal amplification.

One of the notable characteristics of this transistor is its DC current gain (hFE) of 80 at 5mA, 10V, ensuring a reliable and efficient performance. The device also boasts a high transition frequency of 250MHz, making it suitable for applications that require fast switching speeds.

With an operating temperature range of -55°C to 150°C, the MUN5114DWT1 is designed to withstand extreme conditions, ensuring durability and stable operation across various environments. Its surface mount design allows for efficient assembly in automated manufacturing processes, contributing to reduced production costs and time.

Whether it's for amplification, switching, or any other application requiring a robust PNP transistor, the MUN5114DWT1 from ON Semiconductor is an excellent choice that combines performance, reliability, and versatility.

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