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MUN5130T1G

Part No MUN5130T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V SC70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr ON Semiconductor
Package Tape & Reel
Product Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 202 mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
Base Product Number MUN5130
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 645722-MUN5130T1G
Ultra Librarian 3D Model Ultra Librarian MUN5130T1G CAD Model

Description

ON Semiconductor MUN5130T1G - Overview

The MUN5130T1G is a high-performance PNP bipolar transistor from ON Semiconductor, known for its reliability and efficiency in a variety of electronic applications. This semiconductor device is designed to deliver excellent current amplification and switching capabilities, making it an ideal choice for amplification and switching applications.

Key Features

  • Transistor Type: The MUN5130T1G is a PNP (Positive-Negative-Positive) bipolar junction transistor (BJT), which means it is controlled by the flow of current and is used primarily in low-power and high-performance applications.
  • Current Rating: It has a collector current rating of 100 mA, allowing it to handle moderate levels of current in electronic circuits.
  • Voltage Ratings: The device can support a collector-emitter voltage of up to 50 V and a collector-base voltage of 50 V, providing a good range of operation for various applications.
  • Power Dissipation: With a power dissipation of 225 mW, the MUN5130T1G can manage thermal energy effectively, ensuring stability and longevity.
  • Package: The transistor comes in a compact SOT-23 surface-mount package, which is suitable for automated assembly processes and helps save space on printed circuit boards (PCBs).
  • Moisture Sensitivity Level: It has a moisture sensitivity level of 1, ensuring high reliability and performance even in humid conditions.
  • RoHS Compliant: The MUN5130T1G is RoHS compliant, meaning it is manufactured without the use of hazardous substances, making it environmentally friendly and suitable for use in various global markets.

Applications

The ON Semiconductor MUN5130T1G is versatile and can be used in a wide range of applications, including but not limited to:

  • Signal amplification in audio and video equipment
  • Driver stages in amplifiers
  • Switching operations in industrial controls
  • Power management in portable devices
  • Linear amplification and switching in consumer electronics

With its robust performance characteristics, the MUN5130T1G is a reliable component for designers and engineers looking to enhance the efficiency and functionality of their electronic circuits.

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