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NDF02N60ZG

Part No NDF02N60ZG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel Power MOSFET 600 V, 4.0
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 50μA
Gate Charge (Qg) (Maximum) @ Vgs 10.1nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 274pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 24W (Tc)
Rds On (Maximum) @ Id, Vgs 4.8 Ohm @ 1A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220FP
Package TO-220-3 Full Pack
Win Source Part Number 1230852-NDF02N60ZG
Manufacturer Homepage www.onsemi.com
Family Name NDF02N60Z
Introduction Date February 01, 2010
ECCN EAR99
Country of Origin Malaysia, Republic of Korea, Vietnam
Halogen Free Compliant
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NDF02N60ZG CAD Model

Description

Introducing the NDF02N60ZG Power MOSFET by ON Semiconductor

The NDF02N60ZG is a high-performance, N-channel power MOSFET brought to you by ON Semiconductor, a trusted leader in energy-efficient innovations. This device is tailored for a wide range of applications, including switch-mode power supplies, power conversion systems, and motor control circuits. The NDF02N60ZG is designed to deliver efficiency and reliability in high voltage operations, making it an ideal choice for designers looking to enhance system performance in a compact form factor.

Key Features of the NDF02N60ZG

  • High Voltage Capability: With a drain-to-source voltage (V<sub>DS) of 600V, the NDF02N60ZG is capable of handling high voltage applications with ease, providing a generous design margin for enhanced safety and reliability.
  • Low On-Resistance: The device boasts a low R<sub>DS(on) of 1.15 Ohm at V<sub>GS = 10V, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • Fast Switching Performance: With its fast switching speed, the NDF02N60ZG minimizes switching losses and is well-suited for high-frequency circuits, contributing to more efficient power management.
  • Robust Thermal Characteristics: The power MOSFET is encapsulated in a TO-220FP package, which offers excellent thermal performance and ensures the device operates within safe temperature ranges under various load conditions.
  • Enhanced Durability: ON Semiconductor’s commitment to quality means that the NDF02N60ZG is built to withstand the rigors of demanding applications, ensuring a long operational lifespan and consistent performance.

Applications

The versatility of the NDF02N60ZG MOSFET makes it suitable for a variety of applications, including:

  • Power Supply Units (PSUs)
  • AC-DC Converters
  • DC-AC Inverters
  • Power Factor Correction (PFC) Circuits
  • LED Lighting Solutions
  • Motor Drive Controllers

With its combination of high voltage handling, low on-resistance, and swift switching capabilities, the NDF02N60ZG from ON Semiconductor is an exceptional component for designers aiming to optimize power efficiency and reliability in their electronic systems. Its robust package and thermal properties further ensure that this MOSFET will deliver top-notch performance in a wide array of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5540 $52.6300
225+ $0.4545 $102.2625
345+ $0.4403 $151.9035
470+ $0.4261 $200.2670
610+ $0.4119 $251.2590
815+ $0.3693 $300.9795
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 440 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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