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NDF08N60ZH

Part No NDF08N60ZH
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 8.4A TO220FP
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Rohs State Need to verify
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Categories Discrete Semiconductor Products
Features N-Channel 600 V 8.4A (Tc) 36W (Tc) Through Hole
Manufacturer ON Semiconductor
Package Tube
Part Status Obsolete
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-220-3 Full Pack
Family Name NDF08
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 50
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 887183-NDF08N60ZH
Ultra Librarian 3D Model Ultra Librarian NDF08N60ZH CAD Model

Description

The NDF08N60ZH is a high-performance, N-channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is a robust component that features a 600V drain-to-source breakdown voltage (V<sub>DS), making it an excellent choice for high-voltage applications. The device is tailored for power switching circuits, and it is widely used in power supplies, converters, and motor drive applications.

With a continuous drain current (I<sub>D) of 8A at 25°C, the NDF08N60ZH is capable of handling significant power without overheating, thanks to its low on-resistance (R<sub>DS(on)) of 0.85 Ohms. This low on-resistance ensures high efficiency and minimal power loss during operation, which is critical for maintaining performance in power-intensive applications.

The device comes in a TO-220-3 package, which is known for its durability and ease of mounting on printed circuit boards. The TO-220-3 package also allows for effective heat dissipation, which is vital for maintaining stability and prolonging the lifespan of the MOSFET when operating at high currents or voltages.

ON Semiconductor's NDF08N60ZH also features a fast switching speed, which is an essential attribute for reducing switching losses in high-frequency circuits. This characteristic, combined with its ruggedness and reliability, makes the NDF08N60ZH a preferred choice for engineers and designers looking to optimize their power management systems.

In addition, the NDF08N60ZH is designed with a high avalanche energy rating, providing protection against unexpected voltage spikes and enhancing the robustness of the device under harsh conditions. This makes it suitable for use in environments where electrical stress can be a concern.

Overall, the NDF08N60ZH from ON Semiconductor is a testament to the company's commitment to providing high-quality, reliable components for advanced electronic systems. With its combination of high voltage capability, efficiency, and fast switching performance, it stands out as an excellent choice for designers who require a MOSFET that can deliver top-notch performance without compromising on durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.4324 $59.4592
19+ $6.0984 $115.8696
30+ $5.9078 $177.2340
41+ $5.7173 $234.4093
53+ $5.5267 $292.9151
70+ $4.9550 $346.8500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,870 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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