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NGTG40N120FL2WG

Part No NGTG40N120FL2WG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 40A TO-247 / IGBT Trench Field Stop 1200 V 80 A 535 W Through Hole TO-247-3
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer onsemi
Packaging Tube
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Power - Max 535 W
Switching Energy 3.4mJ (on), 1.1mJ (off)
Input Type Standard
Gate Charge 313 nC
Td (on/off) @ 25°C 116ns/286ns
Test Condition 600V, 40A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Supplier Device Package TO-247-3
Base Product Number NGTG40
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 2156-NGTG40N120FL2WG-488
Standard Package 30
Win Source Part Number 1324950-NGTG40N120FL2WG
Ultra Librarian 3D Model Ultra Librarian NGTG40N120FL2WG CAD Model

Description

Introducing the NGTG40N120FL2WG IGBT from ON Semiconductor

The NGTG40N120FL2WG is a state-of-the-art insulated gate bipolar transistor (IGBT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-performance IGBT is part of ON Semiconductor's extensive portfolio of power semiconductors that cater to a wide range of power applications, ensuring efficiency and reliability.

Key Features of the NGTG40N120FL2WG

  • High Current Capability: With a continuous collector current (Ic) rating of 40A, the NGTG40N120FL2WG can handle significant power levels, making it suitable for high-power applications.
  • High Voltage Rating: The device is rated for a collector-emitter voltage (Vce) of 1200V, providing a wide safety margin for applications requiring high voltage operation.
  • Low On-Resistance: The IGBT boasts a low on-state voltage drop due to its optimized saturation voltage, leading to reduced conduction losses and improved efficiency.
  • Fast Switching Performance: The NGTG40N120FL2WG offers fast switching speeds, which minimizes switching losses and enhances performance in high-frequency applications.
  • Co-Packaged Free Wheeling Diode: This IGBT comes with an integrated fast recovery diode, ensuring efficient commutation and protection against reverse voltage transients.

Applications

The NGTG40N120FL2WG is ideal for a variety of power applications including:

  • Uninterruptible power supplies (UPS)
  • Motor drives
  • Power inverters
  • Induction heating
  • Renewable energy inverters
  • Switched-mode power supplies (SMPS)

Reliability and Quality

ON Semiconductor is committed to delivering products that meet the highest standards of quality and reliability. The NGTG40N120FL2WG IGBT is no exception, undergoing rigorous testing and quality control processes to ensure it meets the demanding requirements of industrial and consumer applications. With its robust design and superior performance characteristics, the NGTG40N120FL2WG is a perfect choice for designers looking for a reliable and efficient solution for their high-power electronic systems.

For detailed product specifications, application notes, and additional resources, please visit ON Semiconductor's official website or contact their support team for personalized assistance.

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