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NSS35200CF8T1G

Part No NSS35200CF8T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 35V 2A 8CHIPFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 35V
Max Vce (sat) 300mV @ 20mA, 2A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 100 @ 1.5A, 2V
Maximum Power Dissipation 635mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package ChipFET
Win Source Part Number 100336-NSS35200CF8T1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NSS35200CF8T1G CAD Model

Description

ON Semiconductor NSS35200CF8T1G Overview

The ON Semiconductor NSS35200CF8T1G is a high-performance, PNP Silicon Epitaxial Planar Transistor designed for a wide range of applications. This versatile component is well-suited for use in linear and switching functions across various electronic devices. With its compact SOT-23 surface-mount package, the NSS35200CF8T1G offers a space-saving solution for modern electronic circuitry.

Key Features

  • Transistor Polarity: PNP - This type of bipolar junction transistor allows for high current gain and is commonly used in amplification and switching applications.
  • Collector-Emitter Voltage (VCEO): 20V - The maximum voltage across the collector-emitter junction ensures safe operation within a range of electronic circuits.
  • Collector Current (IC): 500mA - A robust collector current rating enables the device to handle moderate power loads.
  • Power Dissipation (Pd): 225mW - Adequate power dissipation capacity ensures the device can operate at higher currents without overheating.
  • DC Current Gain (hFE): 100 to 300 - This range of current gain indicates efficient current amplification capabilities.
  • Operating and Storage Junction Temperature Range: -55°C to +150°C - A wide temperature range ensures reliability and performance stability in various environmental conditions.
  • Package / Case: SOT-23-3 - The small SOT-23 package is ideal for space-constrained applications and allows for high-density PCB layouts.

Applications

The NSS35200CF8T1G transistor is suitable for a variety of applications, including but not limited to:

  • Power Management Circuits
  • Signal Amplification
  • Switching Regulators
  • Motor Controllers
  • Audio Amplifiers
  • Linear Voltage Regulators

Quality and Reliability

ON Semiconductor is known for its commitment to quality and the NSS35200CF8T1G is no exception. Manufactured with high standards, this component is designed for long-term reliability and consistent performance, making it a trusted choice for engineers and designers across various industries.

Whether you're developing consumer electronics, industrial systems, or automotive applications, the NSS35200CF8T1G offers the performance and durability needed to meet the demands of your projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,186 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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