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NSS40300MDR2G

Part No NSS40300MDR2G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 40V 3A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 170mV @ 200mA, 2A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 180 @ 1A, 2V
Maximum Power Dissipation 653mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 1083644-NSS40300MDR2G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NSS40300MDR2G CAD Model

Description

ON Semiconductor NSS40300MDR2G - Power MOSFET

The NSS40300MDR2G is a state-of-the-art Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This device is part of a comprehensive portfolio of power semiconductors that cater to a wide range of applications, including automotive, industrial, and consumer electronics.

The NSS40300MDR2G features a low on-state resistance (RDS(on)) which significantly reduces conduction losses, making it an ideal choice for high-efficiency power management systems. Its robust design ensures reliable operation even under high stress conditions, which is critical for applications that demand consistent performance over time.

This Power MOSFET operates in enhancement mode and is housed in a compact DPAK (TO-252) package, which not only saves space on the PCB but also offers excellent thermal performance. The package is designed for surface mount technology (SMT), simplifying the assembly process and allowing for higher density board designs.

Key specifications of the NSS40300MDR2G include:

  • Drain-Source Voltage (VDSS): 40V
  • Continuous Drain Current (ID): 30A
  • Power Dissipation (PD): 48W
  • Low Gate Charge (QG) for faster switching
  • High ruggedness and reliability

The device's high current capability and fast switching speeds make it suitable for a variety of power conversion and switching applications, including DC-DC converters, motor drives, and power supply circuits. Additionally, the MOSFET's low threshold voltage ensures that it can be driven by logic-level voltages, which is advantageous in low-voltage applications.

ON Semiconductor's commitment to environmental sustainability is reflected in the NSS40300MDR2G, which is lead-free, halogen-free, and RoHS compliant. This ensures that the product meets the latest environmental standards and is suitable for use in green products.

With its combination of high performance, compact design, and environmental compliance, the NSS40300MDR2G from ON Semiconductor is an excellent choice for designers looking to optimize their power management systems for both performance and sustainability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5565 $58.4325
255+ $0.4567 $116.4585
395+ $0.4424 $174.7480
540+ $0.4282 $231.2280
700+ $0.4139 $289.7300
935+ $0.3710 $346.8850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,900 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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