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NTB65N02RT4G

Part No NTB65N02RT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 7.6A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 9.5nC @ 4.5V
Max Input Capacitance 1330pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.04W (Ta), 62.5W (Tc)
Maximum Rds On at Id,Vgs 8.2 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083718-NTB65N02RT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTB65N02RT4G CAD Model

Description

The NTB65N02RT4G is a state-of-the-art N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in innovative energy-efficient semiconductor solutions. This high-performance transistor is engineered to handle significant power levels and is commonly utilized in a wide array of applications including power management, automotive, and industrial systems.

Key Features

  • High Efficiency: With a low on-state resistance (R<sub>DS(on)), the NTB65N02RT4G ensures high efficiency in power conversion, leading to energy savings and reduced heat generation.
  • Robust Thermal Performance: The device is encapsulated in a durable Pb-free package that enhances its thermal characteristics, allowing for better heat dissipation and improved reliability in high-temperature environments.
  • High Current Capability: This MOSFET is capable of conducting large currents, making it suitable for high-power applications.
  • Gate Charge Optimization: The optimized gate charge of the NTB65N02RT4G enables faster switching speeds, which is critical for high-frequency operations.

Applications

The versatility of the NTB65N02RT4G allows it to be used in various applications, such as:

  • DC/DC converters
  • Motor drives
  • Power supply systems
  • Automotive applications
  • Switching regulators
  • Power management solutions

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 24V Continuous Drain Current (I<sub>D) 98A Power Dissipation (P<sub>D) 3.8W Operating Temperature Range -55°C to +175°C Package TO-263 (D2PAK)

Quality and Environmental Compliance

The ON Semiconductor NTB65N02RT4G is RoHS compliant and adheres to the highest standards of quality and environmental management, reflecting ON Semiconductor's commitment to environmental responsibility and sustainable manufacturing practices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7477 $59.8160
190+ $0.6135 $116.5650
295+ $0.5944 $175.3480
405+ $0.5752 $232.9560
520+ $0.5560 $289.1200
700+ $0.4985 $348.9500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,180 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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