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NTB75N03-6G

Part No NTB75N03-6G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 75nC @ 5V
Max Input Capacitance 5635pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 37.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083719-NTB75N03-6G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTB75N03-6G CAD Model

Description

Product Overview: NTB75N03-6G from ON Semiconductor

The NTB75N03-6G is a state-of-the-art power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is a part of the Trench Power MOSFET product line, which is renowned for its high-density cell design and exceptional on-resistance, providing superior power efficiency and reliability.

Key Features

  • High Performance: The NTB75N03-6G features a low threshold drive, making it suitable for a wide range of applications that require high-speed switching.
  • Energy Efficiency: With a low on-resistance of only 7.5 mOhm at 10 V, this MOSFET minimizes conduction losses, thereby enhancing power efficiency and reducing operational costs.
  • Robust Thermal Management: The device is encapsulated in a TO-263 package, which provides excellent thermal performance and contributes to the device's longevity, even under high current conditions.
  • High Current Capacity: It is capable of handling continuous drain currents up to 75 A, making it ideal for high-power applications.
  • Logic Level Gate Drive: The NTB75N03-6G can be driven directly from logic level voltages, simplifying the design of the drive circuitry.

Applications

The NTB75N03-6G is versatile and can be used in a wide array of applications. Its robustness and high-efficiency make it particularly well-suited for:

  • DC/DC converters and synchronous rectification in computing and telecom power supplies
  • Motor control in industrial and automotive systems
  • Power management in portable and battery-powered devices
  • High-performance computing and server farms

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NTB75N03-6G is no exception, with its design and manufacturing processes geared towards ensuring reliability and performance consistency. It is RoHS compliant, adhering to the latest environmental standards and regulations.

Conclusion

The NTB75N03-6G is an exemplary component that combines ON Semiconductor's dedication to energy efficiency and innovation. Its superior performance, coupled with a robust design, makes it an excellent choice for designers looking to optimize their power management solutions.

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