ON Semiconductor NTD4965N-1G - Power MOSFET

The NTD4965N-1G from ON Semiconductor is a high-performance Power MOSFET designed for a wide array of applications requiring efficient power management and delivery. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions and innovative semiconductor technologies.

Key Features:

• Low RDS(on): The NTD4965N-1G boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
• High Current Capacity: With its ability to handle a continuous drain current of up to 41A, this MOSFET can manage high current demands with ease, making it suitable for high-power circuits.
• Advanced Technology: Utilizing ON Semiconductor's proprietary trench technology, the device offers superior performance in terms of switching speed and reliability.
• Robust Thermal Performance: The NTD4965N-1G is encapsulated in a TO-252 (DPAK) package, known for its excellent thermal characteristics, ensuring stable operation even under high-temperature conditions.

Applications:

The versatility of the NTD4965N-1G allows it to be used across various applications, including but not limited to:

• DC/DC Converters
• Power Supplies
• Motor Drives
• Automotive Systems
• Power Management Circuits

Specifications:

Overall, the NTD4965N-1G Power MOSFET is an excellent choice for designers looking for a robust, high-performance power switching solution. Its combination of low on-resistance, high current capacity, and advanced trench technology makes it a highly efficient component for any power management system.