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NTD60N02R-035

Part No NTD60N02R-035
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 8.5A IPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 8.5A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1330pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.25W (Ta), 58W (Tc)
Maximum Rds On at Id,Vgs 10.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 041970-NTD60N02R-035
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD60N02R-035 CAD Model

Description

ON Semiconductor NTD60N02R-035 MOSFET

The NTD60N02R-035 from ON Semiconductor is a high-performance Power MOSFET that offers an excellent balance of dynamic performance and power efficiency, making it an ideal choice for a wide range of power management applications. This N-channel MOSFET is designed to handle high currents and voltages with ease, thanks to its robust construction and advanced manufacturing techniques.

With a drain-to-source voltage (Vds) of 24V and a continuous drain current (Id) of 60A, the NTD60N02R-035 is capable of managing significant power loads. The device features RDS(on) (static drain-to-source on-resistance) values as low as 3.5 mΩ, which ensures minimal power loss and heat generation during operation, thereby increasing the overall efficiency of the system it is integrated into.

The MOSFET comes in a compact and surface-mountable DPAK (TO-252) package, which is widely used in the industry and allows for efficient thermal management and space-saving on printed circuit boards (PCBs). The package is designed to be compatible with standard automated assembly processes, which simplifies the manufacturing and reduces the production costs for electronic devices.

One of the key features of the NTD60N02R-035 is its fast switching speed, which is essential for applications such as DC-DC converters, motor drives, and power supply circuits. The device's low gate charge (Qg) and low input capacitance (Ciss) contribute to its swift response times, making it a suitable component for high-frequency circuits.

Safety and reliability are paramount in power components, and the NTD60N02R-035 does not disappoint. It includes built-in protection features such as a robust gate oxide layer and a ruggedized device design that ensures resilience against voltage spikes and other electrical stresses.

In summary, the NTD60N02R-035 Power MOSFET from ON Semiconductor is a versatile and reliable component that offers high current handling, low on-resistance, fast switching, and a compact footprint. It is a solid choice for engineers and designers looking to improve the power efficiency and performance of their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,780 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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