The ON Semiconductor NTGS1135PT1G is a state-of-the-art power MOSFET designed for high efficiency and power density in a compact package. This device is part of ON Semiconductor's portfolio of low voltage, high-performance transistors that are ideal for a wide range of applications, including power management, load switching, and DC-DC conversion in computing, consumer, and industrial electronics.
Key Features
- Low On-Resistance: The NTGS1135PT1G boasts an exceptionally low on-resistance, which minimizes conduction losses and improves overall efficiency, making it suitable for applications where power conservation is critical.
- High-Speed Switching: Designed for fast switching applications, this MOSFET enables high-frequency operation while maintaining low switching losses, which is essential for efficient power conversion and regulation.
- PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process technology enhances the device's performance by optimizing the cell structure for reduced gate charge and lower on-resistance.
- Compact Footprint: The NTGS1135PT1G comes in a small, surface-mountable SOT-23 package, which is ideal for space-constrained applications without compromising on power handling capabilities.
Applications
- DC-DC Converters
- Power Management Modules
- Battery Powered Devices
- Motor Control Circuits
- Load Switching
Specifications
| Parameter |
Value |
| Drain-to-Source Voltage (VDS) |
30 V |
| Gate-to-Source Voltage (VGS) |
±20 V |
| Continuous Drain Current (ID) |
9.7 A |
| Power Dissipation (PD) |
2.5 W |
| RDS(on) |
20 mΩ |
The NTGS1135PT1G is a testament to ON Semiconductor's commitment to providing innovative and reliable components that meet the evolving needs of the electronics industry. With its robust design and advanced features, this power MOSFET is an excellent choice for designers looking to enhance system performance and efficiency.