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NTGS1135PT1G

Part No NTGS1135PT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 4.6A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 850mV @ 250μA
Max Gate Charge 21nC @ 4.5V
Max Input Capacitance 2200pF @ 6V
Maximum Gate-Source Voltage ±6V
Power Dissipation (Max) 970mW (Ta)
Maximum Rds On at Id,Vgs 31 mOhm @ 4.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6
Win Source Part Number 1083881-NTGS1135PT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTGS1135PT1G CAD Model

Description

The ON Semiconductor NTGS1135PT1G is a state-of-the-art power MOSFET designed for high efficiency and power density in a compact package. This device is part of ON Semiconductor's portfolio of low voltage, high-performance transistors that are ideal for a wide range of applications, including power management, load switching, and DC-DC conversion in computing, consumer, and industrial electronics.

Key Features

  • Low On-Resistance: The NTGS1135PT1G boasts an exceptionally low on-resistance, which minimizes conduction losses and improves overall efficiency, making it suitable for applications where power conservation is critical.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET enables high-frequency operation while maintaining low switching losses, which is essential for efficient power conversion and regulation.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process technology enhances the device's performance by optimizing the cell structure for reduced gate charge and lower on-resistance.
  • Compact Footprint: The NTGS1135PT1G comes in a small, surface-mountable SOT-23 package, which is ideal for space-constrained applications without compromising on power handling capabilities.

Applications

  • DC-DC Converters
  • Power Management Modules
  • Battery Powered Devices
  • Motor Control Circuits
  • Load Switching

Specifications

Parameter Value
Drain-to-Source Voltage (VDS) 30 V
Gate-to-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) 9.7 A
Power Dissipation (PD) 2.5 W
RDS(on) 20 mΩ

The NTGS1135PT1G is a testament to ON Semiconductor's commitment to providing innovative and reliable components that meet the evolving needs of the electronics industry. With its robust design and advanced features, this power MOSFET is an excellent choice for designers looking to enhance system performance and efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4814 $50.5470
255+ $0.3950 $100.7250
395+ $0.3827 $151.1665
545+ $0.3703 $201.8135
700+ $0.3580 $250.6000
935+ $0.3210 $300.1350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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