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NTLJD3119CTBG

Part No NTLJD3119CTBG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N/P-CH 20V 3.8A/3.3A 6-Pin WDFN EP T/R / MOSFET N/P-CH 20V 6WDFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.6A, 2.3A
Maximum Rds On at Id,Vgs 65 mOhm @ 3.8A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 3.7nC @ 4.5V
Max Input Capacitance 271pF @ 10V
Maximum Power Dissipation 710mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-WDFN (2x2)
Win Source Part Number 102590-NTLJD3119CTBG
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name NTLJD3119
Introduction Date October 13, 2006
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian NTLJD3119CTBG CAD Model

Description

The ON Semiconductor NTLJD3119CTBG is a state-of-the-art Power MOSFET designed for high-efficiency power management applications. This robust component features a dual N-channel configuration, making it ideal for compact and high-performance designs.

Key Features:

  • Low On-Resistance: The NTLJD3119CTBG boasts an exceptionally low on-resistance, which significantly reduces conduction losses and improves overall efficiency.
  • High Switching Speed: With its fast switching capabilities, this MOSFET is suitable for high-frequency applications, ensuring minimal power loss during operation.
  • PowerTrench® Technology: This product incorporates ON Semiconductor's proprietary PowerTrench® technology, which optimizes the device's performance by reducing gate charge and providing a low gate resistance.
  • Dual N-Channel: The dual N-channel feature allows for a compact design by integrating two independent N-channel MOSFETs into a single package, thus saving space on the PCB.
  • Thermal Management: The NTLJD3119CTBG is encapsulated in a Pb-free, halogen-free, and RoHS compliant package, which aids in superior thermal performance and reliability.

Applications:

The NTLJD3119CTBG is suitable for a wide range of applications, including:

  • DC/DC Converters
  • Power Supplies
  • Motor Drives
  • Load Switches
  • Battery Management Systems
  • Computing and Server Systems

Technical Specifications:

Parameter Value Drain-to-Source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 8A Power Dissipation (P<sub>D) 1.56W R<sub>DS(on) 20 mΩ Package ChipFET

In summary, the NTLJD3119CTBG from ON Semiconductor is an ideal choice for designers looking for a high-quality, reliable, and efficient Power MOSFET. Its advanced features and compact design enable it to meet the stringent demands of modern electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3190 $51.0400
385+ $0.2618 $100.7930
595+ $0.2536 $150.8920
815+ $0.2454 $200.0010
1,055+ $0.2372 $250.2460
1,415+ $0.2127 $300.9705
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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