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NTMD6P02R2G

Part No NTMD6P02R2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 4.8A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.8A
Maximum Rds On at Id,Vgs 33 mOhm @ 6.2A, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 35nC @ 4.5V
Max Input Capacitance 1700pF @ 16V
Maximum Power Dissipation 750mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 025798-NTMD6P02R2G
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Consumer Electronics
Ultra Librarian 3D Model Ultra Librarian NTMD6P02R2G CAD Model

Description

ON Semiconductor NTMD6P02R2G - Power MOSFET

The NTMD6P02R2G is a high-performance P-Channel Power MOSFET brought to you by ON Semiconductor, a reputable leader in the semiconductor industry. This robust component is designed to meet a wide array of power management requirements, particularly for those applications that demand efficient power conversion and reliable switching capabilities.

Encased in a compact and surface-mountable SOIC-8 package, the NTMD6P02R2G offers an optimal solution for space-constrained applications without compromising on power handling and thermal performance. This makes it an excellent choice for modern electronic devices where efficiency and size are key considerations.

Key Features:

  • Low R<sub>DS(on): The device boasts a low on-state resistance of typically 58 mΩ at V<sub>GS = -10 V, ensuring minimal power loss during operation and thus enhancing overall efficiency.
  • High Current Capacity: With a continuous drain current of -6.7 A, the NTMD6P02R2G is capable of handling significant current loads, making it suitable for high-power applications.
  • Advanced Gate Charge: It features an optimized gate charge that facilitates faster switching speeds, which is critical for reducing switching losses in power conversion circuits.
  • Voltage Tolerance: The MOSFET can tolerate drain-source voltages up to -20 V, providing a margin of safety for applications with fluctuating supply voltages.
  • Thermal Management: Its power dissipation of 2.5 W, coupled with the SOIC-8 package's efficient thermal characteristics, ensures the device operates reliably over a wide temperature range.

ON Semiconductor's NTMD6P02R2G is optimized for a variety of applications, including power supply circuits, DC-DC converters, motor drives, and other power-intensive applications. Its robustness is further guaranteed by its compliance with the rigorous AEC-Q101 standards, making it suitable for automotive applications where reliability under harsh conditions is paramount.

Whether you're designing for consumer electronics, automotive, or industrial systems, the NTMD6P02R2G offers a perfect blend of performance, efficiency, and reliability that engineers and designers can trust to meet their stringent power management requirements.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7953 $59.6475
180+ $0.6526 $117.4680
275+ $0.6322 $173.8550
380+ $0.6118 $232.4840
490+ $0.5914 $289.7860
655+ $0.5301 $347.2155
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,985 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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