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NTMFS4837NHT3G

Part No NTMFS4837NHT3G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10.2A SO-8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.2A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 23.8nC @ 4.5V
Max Input Capacitance 3016pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 880mW (Ta), 48W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN, 5 Leads
Win Source Part Number 1083916-NTMFS4837NHT3G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMFS4837NHT3G CAD Model

Description

The NTMFS4837NHT3G is a cutting-edge Power MOSFET brought to you by ON Semiconductor, a company renowned for its innovative approach in the semiconductor industry. This product is designed to cater to a wide range of applications requiring high efficiency, reliability, and power density. The NTMFS4837NHT3G is part of the N-channel MOSFET family, which is known for its exceptional performance in switching applications.

Key Features:

  • High Current Capacity: This MOSFET is capable of handling continuous drain currents up to 30 A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical R<sub>DS(on) of just 8.6 mΩ at V<sub>GS = 10 V, the device ensures minimal power loss and improved efficiency.
  • Fast Switching Performance: The NTMFS4837NHT3G is optimized for fast switching, which is crucial for reducing switching losses and improving overall performance in power conversion systems.
  • High-Temperature Operation: It is capable of operating at junction temperatures up to 150°C, providing reliability in harsh environments.
  • PowerTrench® Technology: This proprietary technology from ON Semiconductor enables the MOSFET to achieve low gate charge and capacitance, enhancing its switching characteristics.

Applications:

The versatility of the NTMFS4837NHT3G allows it to be used in a variety of applications, including:

  • DC/DC Converters
  • Motor Drives
  • Power Supply Modules
  • Synchronous Rectification
  • Point of Load (POL) Regulation
  • Server and Telecom Power Systems

Package and Reliability:

This MOSFET comes in a compact 5x6 mm footprint with an environmentally friendly, RoHS compliant package. The NTMFS4837NHT3G also includes an integrated ESD protection diode, ensuring robustness and long-term reliability for sensitive applications.

Conclusion:

The NTMFS4837NHT3G from ON Semiconductor is an excellent choice for designers looking for a high-performance Power MOSFET that combines efficiency, thermal management, and space-saving design. Its robust features and versatility make it an ideal component for advancing the performance of power management systems.

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