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NVD5803NT4G

Part No NVD5803NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 85A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3220 pF @ 25 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number NVD580
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 650022-NVD5803NT4G
Ultra Librarian 3D Model Ultra Librarian NVD5803NT4G CAD Model

Description

ON Semiconductor NVD5803NT4G Overview

The NVD5803NT4G is a state-of-the-art power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This particular component is designed to meet a wide range of applications, offering high performance in a compact and efficient package. The NVD5803NT4G is part of ON Semiconductor's extensive portfolio of power management devices, featuring advanced technology to provide excellent power control and efficiency.

Key Features

  • High Current Capability: The NVD5803NT4G is capable of handling high continuous drain currents, making it suitable for demanding applications.
  • Low On-Resistance: With its low R<sub>DS(on), it ensures minimal power loss and heat generation, leading to a more reliable and long-lasting device performance.
  • Fast Switching Speed: The MOSFET is engineered for fast switching, contributing to improved efficiency in power conversion applications.
  • Thermal Performance: Its excellent thermal characteristics allow for better heat dissipation, which is crucial for maintaining performance and longevity under high-power operation.
  • Robustness: The device is designed to withstand rigorous conditions, offering enhanced durability and resistance to harsh environments.

Applications

The versatility of the NVD5803NT4G makes it an ideal choice for a broad range of applications. It is particularly well-suited for power supply circuits, DC-DC converters, motor drives, and other high-efficiency power management tasks. Its robust design also makes it a reliable component for automotive applications, where performance and durability are critical.

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NVD5803NT4G is manufactured to meet stringent standards, ensuring reliability and performance consistency. Customers can trust this MOSFET to deliver the efficiency and durability required for their advanced electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2640 $58.7520
44+ $2.6784 $117.8496
67+ $2.5953 $173.8851
92+ $2.5110 $231.0120
119+ $2.4278 $288.9082
160+ $2.1760 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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