ON Semiconductor NVMFD5C680NLT1G Product Overview

The NVMFD5C680NLT1G is a cutting-edge Power MOSFET device manufactured by ON Semiconductor, a leader in energy-efficient innovations. This product is designed to cater to a wide array of power applications, offering high efficiency and reliability. It is particularly suited for applications that require a compact footprint without compromising on performance.

Key Features

• Low R<sub>DS(on): This device features a low on-resistance, which translates to reduced conduction losses and higher efficiency in applications.
• High Continuous Drain Current (I<sub>D): It is capable of supporting a high continuous drain current, making it suitable for high-power applications.
• Power-SO8 Package: The NVMFD5C680NLT1G comes in a compact Power-SO8 package, which is ideal for space-constrained applications.
• Single N-Channel: This single N-Channel MOSFET is optimized for fast switching performance.
• High Temperature Performance: It is designed to perform reliably in high-temperature environments, ensuring stability across various conditions.

Applications

The versatility of the NVMFD5C680NLT1G makes it well-suited for a broad range of applications, including:

• Power supply units
• DC-DC converters
• Motor drives
• Automotive applications
• Switching regulators

Technical Specifications

Parameter Value R<sub>DS(on) Typically 5.6 mΩ I<sub>D Up to 48 A Package Power-SO8 Channel Type N-Channel Operating Temperature -55°C to +150°C

With its robust design and high-performance characteristics, the NVMFD5C680NLT1G from ON Semiconductor stands out as a superior choice for designers looking for a reliable power MOSFET solution.